Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

Syuto Tamura; Godai Koike; Akira Komatsubara; Tokuyuki Teraji; Shinobu Onoda; Liam P. McGuinness; Lachlan Rogers; Boris Naydenov; E. Wu; Liu Yan; Fedor Jelezko; Takeshi Ohshima; Junichi Isoya; Takahiro Shinada; Takashi Tanii

doi:10.7567/APEX.7.115201

Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

Syuto Tamura
, Godai Koike
, Akira Komatsubara
, Tokuyuki Teraji
, Shinobu Onoda
, Liam P. McGuinness
, Lachlan Rogers
, Boris Naydenov
, E. Wu
, Liu Yan
, Fedor Jelezko
, Takeshi Ohshima
, Junichi Isoya
, Takahiro Shinada
, Takashi Tanii

Institute for Advanced Study in Precision Spectroscopy

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV^-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV^- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.

Original language	English
Pages (from-to)	115201
Number of pages	1
Journal	Applied Physics Express
Volume	7
Issue number	11
DOIs	https://doi.org/10.7567/APEX.7.115201
State	Published - 1 Nov 2014

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Tamura, S., Koike, G., Komatsubara, A., Teraji, T., Onoda, S., McGuinness, L. P., Rogers, L., Naydenov, B., Wu, E., Yan, L., Jelezko, F., Ohshima, T., Isoya, J., Shinada, T., & Tanii, T. (2014). Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation. Applied Physics Express, 7(11), 115201. https://doi.org/10.7567/APEX.7.115201

@article{1d3531059e26486b8d9834056113bf44,

title = "Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation",

abstract = "Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV\%) has 70\% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15\%.",

author = "Syuto Tamura and Godai Koike and Akira Komatsubara and Tokuyuki Teraji and Shinobu Onoda and McGuinness, \{Liam P.\} and Lachlan Rogers and Boris Naydenov and E. Wu and Liu Yan and Fedor Jelezko and Takeshi Ohshima and Junichi Isoya and Takahiro Shinada and Takashi Tanii",

note = "Publisher Copyright: {\textcopyright} 2014 The Japan Society of Applied Physics",

year = "2014",

month = nov,

day = "1",

doi = "10.7567/APEX.7.115201",

language = "英语",

volume = "7",

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Tamura, S, Koike, G, Komatsubara, A, Teraji, T, Onoda, S, McGuinness, LP, Rogers, L, Naydenov, B, Wu, E, Yan, L, Jelezko, F, Ohshima, T, Isoya, J, Shinada, T & Tanii, T 2014, 'Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation', Applied Physics Express, vol. 7, no. 11, pp. 115201. https://doi.org/10.7567/APEX.7.115201

TY - JOUR

T1 - Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

AU - Tamura, Syuto

AU - Koike, Godai

AU - Komatsubara, Akira

AU - Teraji, Tokuyuki

AU - Onoda, Shinobu

AU - McGuinness, Liam P.

AU - Rogers, Lachlan

AU - Naydenov, Boris

AU - Wu, E.

AU - Yan, Liu

AU - Jelezko, Fedor

AU - Ohshima, Takeshi

AU - Isoya, Junichi

AU - Shinada, Takahiro

AU - Tanii, Takashi

PY - 2014/11/1

Y1 - 2014/11/1

N2 - Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.

AB - Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.

UR - https://www.scopus.com/pages/publications/84909989294

U2 - 10.7567/APEX.7.115201

DO - 10.7567/APEX.7.115201

M3 - 文章

AN - SCOPUS:84909989294

SN - 1882-0778

VL - 7

SP - 115201

JO - Applied Physics Express

JF - Applied Physics Express

IS - 11

ER -

Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

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