Approach for determination of extrinsic resistance for equivalent circuit model of metamorphic InP/InGaAs HBTs

J. Gao; X. Li; H. Wang; G. Boeck

doi:10.1049/ip-map:20041157

Approach for determination of extrinsic resistance for equivalent circuit model of metamorphic InP/InGaAs HBTs

J. Gao, X. Li, H. Wang, G. Boeck

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16 Scopus citations

Abstract

An improved extraction procedure for determination of the extrinsic resistances of metamorphic InP heterojunction bipolar transistors (HBTs) is presented. This method is a combination of the test structure method and an analytical method but it does not require numerical optimisation. The main advantage of this method is that the extrinsic base resistance and the collector resistance can be obtained by using cutoff mode S-parameter measurements. Bias-dependent empirical models for the intrinsic resistance and extrinsic base-collector capacitance over the whole region of operation are also presented. Good agreement is obtained between simulated and measured results for a metamorphic InP HBT with a 5 × 5 μm ² emitter in the frequency range 50 MHz-40 GHz over a wide range of bias points.

Original language	English
Pages (from-to)	195-200
Number of pages	6
Journal	IEE Proceedings: Microwaves, Antennas and Propagation
Volume	152
Issue number	3
DOIs	https://doi.org/10.1049/ip-map:20041157
State	Published - Jun 2005
Externally published	Yes

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title = "Approach for determination of extrinsic resistance for equivalent circuit model of metamorphic InP/InGaAs HBTs",

abstract = "An improved extraction procedure for determination of the extrinsic resistances of metamorphic InP heterojunction bipolar transistors (HBTs) is presented. This method is a combination of the test structure method and an analytical method but it does not require numerical optimisation. The main advantage of this method is that the extrinsic base resistance and the collector resistance can be obtained by using cutoff mode S-parameter measurements. Bias-dependent empirical models for the intrinsic resistance and extrinsic base-collector capacitance over the whole region of operation are also presented. Good agreement is obtained between simulated and measured results for a metamorphic InP HBT with a 5 × 5 μm 2 emitter in the frequency range 50 MHz-40 GHz over a wide range of bias points.",

author = "J. Gao and X. Li and H. Wang and G. Boeck",

year = "2005",

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doi = "10.1049/ip-map:20041157",

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pages = "195--200",

journal = "IEE Proceedings: Microwaves, Antennas and Propagation",

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T1 - Approach for determination of extrinsic resistance for equivalent circuit model of metamorphic InP/InGaAs HBTs

AU - Gao, J.

AU - Li, X.

AU - Wang, H.

AU - Boeck, G.

PY - 2005/6

Y1 - 2005/6

N2 - An improved extraction procedure for determination of the extrinsic resistances of metamorphic InP heterojunction bipolar transistors (HBTs) is presented. This method is a combination of the test structure method and an analytical method but it does not require numerical optimisation. The main advantage of this method is that the extrinsic base resistance and the collector resistance can be obtained by using cutoff mode S-parameter measurements. Bias-dependent empirical models for the intrinsic resistance and extrinsic base-collector capacitance over the whole region of operation are also presented. Good agreement is obtained between simulated and measured results for a metamorphic InP HBT with a 5 × 5 μm 2 emitter in the frequency range 50 MHz-40 GHz over a wide range of bias points.

AB - An improved extraction procedure for determination of the extrinsic resistances of metamorphic InP heterojunction bipolar transistors (HBTs) is presented. This method is a combination of the test structure method and an analytical method but it does not require numerical optimisation. The main advantage of this method is that the extrinsic base resistance and the collector resistance can be obtained by using cutoff mode S-parameter measurements. Bias-dependent empirical models for the intrinsic resistance and extrinsic base-collector capacitance over the whole region of operation are also presented. Good agreement is obtained between simulated and measured results for a metamorphic InP HBT with a 5 × 5 μm 2 emitter in the frequency range 50 MHz-40 GHz over a wide range of bias points.

UR - https://www.scopus.com/pages/publications/23044486326

U2 - 10.1049/ip-map:20041157

DO - 10.1049/ip-map:20041157

M3 - 文章

AN - SCOPUS:23044486326

SN - 1350-2417

VL - 152

SP - 195

EP - 200

JO - IEE Proceedings: Microwaves, Antennas and Propagation

JF - IEE Proceedings: Microwaves, Antennas and Propagation

IS - 3

ER -

Approach for determination of extrinsic resistance for equivalent circuit model of metamorphic InP/InGaAs HBTs

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