Application of thermal atomic layer deposited Al2O3 in c-Si solar cells

Yue He; Yanan Dou; Junhao Chu

doi:10.3788/COL201210.S22501

Application of thermal atomic layer deposited Al₂O₃ in c-Si solar cells

Yue He
, Yanan Dou^*
, Junhao Chu

^*Corresponding author for this work

Suntech Power Co. Ltd.
CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Thermal atomic layer deposited (ALD) Al₂O₃ films are applied at the front and rear sides of PERC-type c-Si solar cells. At the front side, Al₂O₃/SiN_x as a double-layer antireflection coating reduces the reflection loss, and at the rear side, Al₂O₃ film as the passivation layer decreases the surface recombination velocity and enhances the internal reflectance at near-infrared (NIR) band together with SiN_x layer. Due to the improvement in the reflectance combined with a decrease of the surface recombination velocity, the PERC solar cells show an improved J_SC by 0.2 mA/cm² compared with the full-area back surface field cell.

Original language	English
Article number	S22501
Journal	Chinese Optics Letters
Volume	10
Issue number	SUPPL.2
DOIs	https://doi.org/10.3788/COL201210.S22501
State	Published - Dec 2012
Externally published	Yes

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title = "Application of thermal atomic layer deposited Al2O3 in c-Si solar cells",

abstract = "Thermal atomic layer deposited (ALD) Al2O3 films are applied at the front and rear sides of PERC-type c-Si solar cells. At the front side, Al2O3/SiNx as a double-layer antireflection coating reduces the reflection loss, and at the rear side, Al2O3 film as the passivation layer decreases the surface recombination velocity and enhances the internal reflectance at near-infrared (NIR) band together with SiNx layer. Due to the improvement in the reflectance combined with a decrease of the surface recombination velocity, the PERC solar cells show an improved JSC by 0.2 mA/cm2 compared with the full-area back surface field cell.",

author = "Yue He and Yanan Dou and Junhao Chu",

year = "2012",

month = dec,

doi = "10.3788/COL201210.S22501",

language = "英语",

volume = "10",

journal = "Chinese Optics Letters",

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T1 - Application of thermal atomic layer deposited Al2O3 in c-Si solar cells

AU - He, Yue

AU - Dou, Yanan

AU - Chu, Junhao

PY - 2012/12

Y1 - 2012/12

N2 - Thermal atomic layer deposited (ALD) Al2O3 films are applied at the front and rear sides of PERC-type c-Si solar cells. At the front side, Al2O3/SiNx as a double-layer antireflection coating reduces the reflection loss, and at the rear side, Al2O3 film as the passivation layer decreases the surface recombination velocity and enhances the internal reflectance at near-infrared (NIR) band together with SiNx layer. Due to the improvement in the reflectance combined with a decrease of the surface recombination velocity, the PERC solar cells show an improved JSC by 0.2 mA/cm2 compared with the full-area back surface field cell.

AB - Thermal atomic layer deposited (ALD) Al2O3 films are applied at the front and rear sides of PERC-type c-Si solar cells. At the front side, Al2O3/SiNx as a double-layer antireflection coating reduces the reflection loss, and at the rear side, Al2O3 film as the passivation layer decreases the surface recombination velocity and enhances the internal reflectance at near-infrared (NIR) band together with SiNx layer. Due to the improvement in the reflectance combined with a decrease of the surface recombination velocity, the PERC solar cells show an improved JSC by 0.2 mA/cm2 compared with the full-area back surface field cell.

UR - https://www.scopus.com/pages/publications/84874497261

U2 - 10.3788/COL201210.S22501

DO - 10.3788/COL201210.S22501

M3 - 文章

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SN - 1671-7694

VL - 10

JO - Chinese Optics Letters

JF - Chinese Optics Letters

IS - SUPPL.2

M1 - S22501

ER -

Application of thermal atomic layer deposited Al₂O₃ in c-Si solar cells

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