APP-LRU: A new page replacement method for PCM/DRAM-based hybrid memory systems

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28 Scopus citations

Abstract

Phase change memory (PCM) has become one of the most promising storage media particularly for memory systems, due to its byte addressability, high access speed, and low energy consumption. In addition, hybrid memory systems involving both PCM and DRAM can utilize the merits of both media and overcome some typical drawbacks of PCM such as high write latency and limited lifecycle. In this paper, we present a novel page replacement algorithm called APP-LRU (Access-Pattern-prediction-based LRU) for PCM/DRAM-based hybrid memory systems. APP-LRU aims to reduce writes to PCM while maintaining stable time performance. Particularly, we detect read/write intensity for each page in the memory, and put read-intensive pages into PCM while placing write-intensive pages in DRAM. We conduct trace-driven experiments on six synthetic traces and one real OLTP trace. The results show that our proposal is able to reduce up to 5 times of migrations more than its competitors.

Original languageEnglish
Title of host publicationNetwork and Parallel Computing - 11th IFIP WG 10.3 International Conference, NPC 2014, Proceedings
PublisherSpringer Verlag
Pages84-95
Number of pages12
ISBN (Print)9783662449165
DOIs
StatePublished - 2014
Externally publishedYes
Event11th IFIP WG 10.3 International Conference on Network and Parallel Computing, NPC 2014 - Ilan, Taiwan, Province of China
Duration: 18 Sep 201420 Sep 2014

Publication series

NameLecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
Volume8707 LNCS
ISSN (Print)0302-9743
ISSN (Electronic)1611-3349

Conference

Conference11th IFIP WG 10.3 International Conference on Network and Parallel Computing, NPC 2014
Country/TerritoryTaiwan, Province of China
CityIlan
Period18/09/1420/09/14

Keywords

  • Hybrid memory
  • Page replacement policy
  • Phase change memory

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