Anomalous temperature dependence of absorption edge in narrow-gap HgCdTe semiconductors

Fangyu Yue; Jun Shao; Xiang Lü; Wei Huang; Junhao Chu; Jun Wu; Xingchao Lin; Li He

doi:10.1063/1.2221411

Anomalous temperature dependence of absorption edge in narrow-gap HgCdTe semiconductors

Fangyu Yue, Jun Shao, Xiang Lü, Wei Huang, Junhao Chu, Jun Wu, Xingchao Lin, Li He

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Abnormal temperature dependence of absorption edge is reported for narrow-gap Hg_1-xCd_xTe semiconductors at low temperature. Infrared absorption spectra are taken for bulk and molecular-beam epitaxial Hg_1-xCd_xTe, respectively, in the temperature range of 11-300 K. The results indicate an abnormal shift of the absorption edge around the temperature range of 30-70 K. Analysis suggests that (i) the phenomenon is introduced by Hg vacancies in the samples, of which the energy level locates about 9-12 meV above the Hg_1-xCd_xTe valence band, and (ii) the conventional criterion for the determination of band gap energy, E _g, from absorption spectra is not accurate enough as soon as Hg vacancies exist, especially at a temperature above 77 K. It hence provides an explanation why there should exist difference between the cutoff wavelength of the detector and the absorption-edge (E_g) wavelength of the material the detector was made of.

Original language	English
Article number	021912
Journal	Applied Physics Letters
Volume	89
Issue number	2
DOIs	https://doi.org/10.1063/1.2221411
State	Published - 2006
Externally published	Yes

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title = "Anomalous temperature dependence of absorption edge in narrow-gap HgCdTe semiconductors",

abstract = "Abnormal temperature dependence of absorption edge is reported for narrow-gap Hg1-xCdxTe semiconductors at low temperature. Infrared absorption spectra are taken for bulk and molecular-beam epitaxial Hg1-xCdxTe, respectively, in the temperature range of 11-300 K. The results indicate an abnormal shift of the absorption edge around the temperature range of 30-70 K. Analysis suggests that (i) the phenomenon is introduced by Hg vacancies in the samples, of which the energy level locates about 9-12 meV above the Hg1-xCdxTe valence band, and (ii) the conventional criterion for the determination of band gap energy, E g, from absorption spectra is not accurate enough as soon as Hg vacancies exist, especially at a temperature above 77 K. It hence provides an explanation why there should exist difference between the cutoff wavelength of the detector and the absorption-edge (Eg) wavelength of the material the detector was made of.",

author = "Fangyu Yue and Jun Shao and Xiang L{\"u} and Wei Huang and Junhao Chu and Jun Wu and Xingchao Lin and Li He",

year = "2006",

doi = "10.1063/1.2221411",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Anomalous temperature dependence of absorption edge in narrow-gap HgCdTe semiconductors

AU - Yue, Fangyu

AU - Shao, Jun

AU - Lü, Xiang

AU - Huang, Wei

AU - Chu, Junhao

AU - Wu, Jun

AU - Lin, Xingchao

AU - He, Li

PY - 2006

Y1 - 2006

N2 - Abnormal temperature dependence of absorption edge is reported for narrow-gap Hg1-xCdxTe semiconductors at low temperature. Infrared absorption spectra are taken for bulk and molecular-beam epitaxial Hg1-xCdxTe, respectively, in the temperature range of 11-300 K. The results indicate an abnormal shift of the absorption edge around the temperature range of 30-70 K. Analysis suggests that (i) the phenomenon is introduced by Hg vacancies in the samples, of which the energy level locates about 9-12 meV above the Hg1-xCdxTe valence band, and (ii) the conventional criterion for the determination of band gap energy, E g, from absorption spectra is not accurate enough as soon as Hg vacancies exist, especially at a temperature above 77 K. It hence provides an explanation why there should exist difference between the cutoff wavelength of the detector and the absorption-edge (Eg) wavelength of the material the detector was made of.

AB - Abnormal temperature dependence of absorption edge is reported for narrow-gap Hg1-xCdxTe semiconductors at low temperature. Infrared absorption spectra are taken for bulk and molecular-beam epitaxial Hg1-xCdxTe, respectively, in the temperature range of 11-300 K. The results indicate an abnormal shift of the absorption edge around the temperature range of 30-70 K. Analysis suggests that (i) the phenomenon is introduced by Hg vacancies in the samples, of which the energy level locates about 9-12 meV above the Hg1-xCdxTe valence band, and (ii) the conventional criterion for the determination of band gap energy, E g, from absorption spectra is not accurate enough as soon as Hg vacancies exist, especially at a temperature above 77 K. It hence provides an explanation why there should exist difference between the cutoff wavelength of the detector and the absorption-edge (Eg) wavelength of the material the detector was made of.

UR - https://www.scopus.com/pages/publications/33746078838

U2 - 10.1063/1.2221411

DO - 10.1063/1.2221411

M3 - 文章

AN - SCOPUS:33746078838

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021912

ER -

Anomalous temperature dependence of absorption edge in narrow-gap HgCdTe semiconductors

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