Anomalous anisotropic magnetoresistance effects in graphene

Yiwei Liu; Rong Yang; Huali Yang; Duoming Wang; Qingfeng Zhan; Guangyu Zhang; Yali Xie; Bin Chen; Run Wei Li

doi:10.1063/1.4894519

Anomalous anisotropic magnetoresistance effects in graphene

Yiwei Liu
, Rong Yang
, Huali Yang
, Duoming Wang
, Qingfeng Zhan
, Guangyu Zhang
, Yali Xie
, Bin Chen
, Run Wei Li

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We investigate the effect of external stimulus (temperature, magnetic field, and gases adsorptions) on anisotropic magnetoresistance (AMR) in multilayer graphene. The graphene sample shows superlinear magnetoresistance when magnetic field is perpendicular to the plane of graphene. A non-saturated AMR with a value of -33% is found at 10 K under a magnetic field of 7 T. It is surprisingly to observe that a two-fold symmetric AMR at high temperature is changed into a one-fold one at low temperature for a sample with an irregular shape. The anomalous AMR behaviors may be understood by considering the anisotropic scattering of carriers from two asymmetric edges and the boundaries of V₊(V_-) electrodes which serve as active adsorption sites for gas molecules at low temperature. Our results indicate that AMR in graphene can be optimized by tuning the adsorptions, sample shape and electrode distribution in the future application.

Original language	English
Article number	097101
Journal	AIP Advances
Volume	4
Issue number	9
DOIs	https://doi.org/10.1063/1.4894519
State	Published - Sep 2014
Externally published	Yes

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10.1063/1.4894519

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@article{a2ad0ec184ac4415a48cfdfd1aefc420,

title = "Anomalous anisotropic magnetoresistance effects in graphene",

abstract = "We investigate the effect of external stimulus (temperature, magnetic field, and gases adsorptions) on anisotropic magnetoresistance (AMR) in multilayer graphene. The graphene sample shows superlinear magnetoresistance when magnetic field is perpendicular to the plane of graphene. A non-saturated AMR with a value of -33\% is found at 10 K under a magnetic field of 7 T. It is surprisingly to observe that a two-fold symmetric AMR at high temperature is changed into a one-fold one at low temperature for a sample with an irregular shape. The anomalous AMR behaviors may be understood by considering the anisotropic scattering of carriers from two asymmetric edges and the boundaries of V+(V-) electrodes which serve as active adsorption sites for gas molecules at low temperature. Our results indicate that AMR in graphene can be optimized by tuning the adsorptions, sample shape and electrode distribution in the future application.",

author = "Yiwei Liu and Rong Yang and Huali Yang and Duoming Wang and Qingfeng Zhan and Guangyu Zhang and Yali Xie and Bin Chen and Li, \{Run Wei\}",

year = "2014",

month = sep,

doi = "10.1063/1.4894519",

language = "英语",

volume = "4",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Anomalous anisotropic magnetoresistance effects in graphene

AU - Liu, Yiwei

AU - Yang, Rong

AU - Yang, Huali

AU - Wang, Duoming

AU - Zhan, Qingfeng

AU - Zhang, Guangyu

AU - Xie, Yali

AU - Chen, Bin

AU - Li, Run Wei

PY - 2014/9

Y1 - 2014/9

N2 - We investigate the effect of external stimulus (temperature, magnetic field, and gases adsorptions) on anisotropic magnetoresistance (AMR) in multilayer graphene. The graphene sample shows superlinear magnetoresistance when magnetic field is perpendicular to the plane of graphene. A non-saturated AMR with a value of -33% is found at 10 K under a magnetic field of 7 T. It is surprisingly to observe that a two-fold symmetric AMR at high temperature is changed into a one-fold one at low temperature for a sample with an irregular shape. The anomalous AMR behaviors may be understood by considering the anisotropic scattering of carriers from two asymmetric edges and the boundaries of V+(V-) electrodes which serve as active adsorption sites for gas molecules at low temperature. Our results indicate that AMR in graphene can be optimized by tuning the adsorptions, sample shape and electrode distribution in the future application.

AB - We investigate the effect of external stimulus (temperature, magnetic field, and gases adsorptions) on anisotropic magnetoresistance (AMR) in multilayer graphene. The graphene sample shows superlinear magnetoresistance when magnetic field is perpendicular to the plane of graphene. A non-saturated AMR with a value of -33% is found at 10 K under a magnetic field of 7 T. It is surprisingly to observe that a two-fold symmetric AMR at high temperature is changed into a one-fold one at low temperature for a sample with an irregular shape. The anomalous AMR behaviors may be understood by considering the anisotropic scattering of carriers from two asymmetric edges and the boundaries of V+(V-) electrodes which serve as active adsorption sites for gas molecules at low temperature. Our results indicate that AMR in graphene can be optimized by tuning the adsorptions, sample shape and electrode distribution in the future application.

UR - https://www.scopus.com/pages/publications/84906872151

U2 - 10.1063/1.4894519

DO - 10.1063/1.4894519

M3 - 文章

AN - SCOPUS:84906872151

SN - 2158-3226

VL - 4

JO - AIP Advances

JF - AIP Advances

IS - 9

M1 - 097101

ER -

Anomalous anisotropic magnetoresistance effects in graphene

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