Annealing behaviors of structural, interfacial and optical properties of HfO2 thin films prepared by plasma assisted reactive pulsed laser deposition

Zhifeng Ying; Wentao Tang; Zhigao Hu; Wenwu Li; Lian Sun; Ning Xu; Jiada Wu

doi:10.1557/JMR.2010.0087

Annealing behaviors of structural, interfacial and optical properties of HfO₂ thin films prepared by plasma assisted reactive pulsed laser deposition

Zhifeng Ying
, Wentao Tang
, Zhigao Hu
, Wenwu Li
, Lian Sun
, Ning Xu
, Jiada Wu^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The structure and properties of HfO₂ films deposited by plasma assisted reactive pulsed laser deposition and annealed in N₂ were studied upon thermal annealing as well as the evaluation of thermal stability by Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and optical transmission measurements. The as-deposited HfO₂ films appear predominantly monoclinic with an amorphous matrix which becomes crystallized after high-temperature annealing. No interfacial SiO_x is observed for the as-deposited films on Si. The deposited HfO₂ films exhibit good thermal stability and show excellent transparency in a wide spectral range with optical band gap energies of 5.65-5.73 eV depending on annealing temperature. An improvement in the optical properties by high-temperature annealing is also observed.

Original language	English
Pages (from-to)	680-686
Number of pages	7
Journal	Journal of Materials Research
Volume	25
Issue number	4
DOIs	https://doi.org/10.1557/JMR.2010.0087
State	Published - Apr 2010

Access to Document

10.1557/JMR.2010.0087

Cite this

@article{14e46f7da9284e5caa433cfd536c7fd8,

title = "Annealing behaviors of structural, interfacial and optical properties of HfO2 thin films prepared by plasma assisted reactive pulsed laser deposition",

abstract = "The structure and properties of HfO2 films deposited by plasma assisted reactive pulsed laser deposition and annealed in N2 were studied upon thermal annealing as well as the evaluation of thermal stability by Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and optical transmission measurements. The as-deposited HfO2 films appear predominantly monoclinic with an amorphous matrix which becomes crystallized after high-temperature annealing. No interfacial SiOx is observed for the as-deposited films on Si. The deposited HfO2 films exhibit good thermal stability and show excellent transparency in a wide spectral range with optical band gap energies of 5.65-5.73 eV depending on annealing temperature. An improvement in the optical properties by high-temperature annealing is also observed.",

author = "Zhifeng Ying and Wentao Tang and Zhigao Hu and Wenwu Li and Lian Sun and Ning Xu and Jiada Wu",

year = "2010",

month = apr,

doi = "10.1557/JMR.2010.0087",

language = "英语",

volume = "25",

pages = "680--686",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Springer International Publishing AG",

number = "4",

}

TY - JOUR

T1 - Annealing behaviors of structural, interfacial and optical properties of HfO2 thin films prepared by plasma assisted reactive pulsed laser deposition

AU - Ying, Zhifeng

AU - Tang, Wentao

AU - Hu, Zhigao

AU - Li, Wenwu

AU - Sun, Lian

AU - Xu, Ning

AU - Wu, Jiada

PY - 2010/4

Y1 - 2010/4

N2 - The structure and properties of HfO2 films deposited by plasma assisted reactive pulsed laser deposition and annealed in N2 were studied upon thermal annealing as well as the evaluation of thermal stability by Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and optical transmission measurements. The as-deposited HfO2 films appear predominantly monoclinic with an amorphous matrix which becomes crystallized after high-temperature annealing. No interfacial SiOx is observed for the as-deposited films on Si. The deposited HfO2 films exhibit good thermal stability and show excellent transparency in a wide spectral range with optical band gap energies of 5.65-5.73 eV depending on annealing temperature. An improvement in the optical properties by high-temperature annealing is also observed.

AB - The structure and properties of HfO2 films deposited by plasma assisted reactive pulsed laser deposition and annealed in N2 were studied upon thermal annealing as well as the evaluation of thermal stability by Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and optical transmission measurements. The as-deposited HfO2 films appear predominantly monoclinic with an amorphous matrix which becomes crystallized after high-temperature annealing. No interfacial SiOx is observed for the as-deposited films on Si. The deposited HfO2 films exhibit good thermal stability and show excellent transparency in a wide spectral range with optical band gap energies of 5.65-5.73 eV depending on annealing temperature. An improvement in the optical properties by high-temperature annealing is also observed.

UR - https://www.scopus.com/pages/publications/77957931939

U2 - 10.1557/JMR.2010.0087

DO - 10.1557/JMR.2010.0087

M3 - 文章

AN - SCOPUS:77957931939

SN - 0884-2914

VL - 25

SP - 680

EP - 686

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 4

ER -

Annealing behaviors of structural, interfacial and optical properties of HfO₂ thin films prepared by plasma assisted reactive pulsed laser deposition

Abstract

Access to Document

Other files and links

Fingerprint

Cite this