Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy

Kenji Sugiura; Hiromichi Ohta; Shin Ichi Nakagawa; Rong Huang; Yuichi Ikuhara; Kenji Nomura; Hideo Hosono; Kunihito Koumoto

doi:10.1063/1.3119631

Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy

Kenji Sugiura, Hiromichi Ohta, Shin Ichi Nakagawa, Rong Huang, Yuichi Ikuhara, Kenji Nomura, Hideo Hosono, Kunihito Koumoto

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Herein we report the anisotropic carrier transport properties of a layered cobaltate, Nax CoO2 epitaxial film grown on the m -plane of an α -Al2 O3 substrate using reactive solid-phase epitaxy. Scanning and transmission electron microscopy analyses revealed that Nax CoO2 was heteroepitaxially grown with the CoO2 conducting planes inclined by ∼43° against the α -Al2 O3 substrate surface. The electrical resistivity parallel to the CoO2 planes was ∼1/5 of the perpendicular one, but the parallel Seebeck coefficient was about twice as large as the perpendicular one. Hence, a higher thermoelectric efficiency in the cobaltates can be obtained within the CoO2 planes.

Original language	English
Article number	152105
Journal	Applied Physics Letters
Volume	94
Issue number	15
DOIs	https://doi.org/10.1063/1.3119631
State	Published - 2009
Externally published	Yes

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title = "Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy",

abstract = "Herein we report the anisotropic carrier transport properties of a layered cobaltate, Nax CoO2 epitaxial film grown on the m -plane of an α -Al2 O3 substrate using reactive solid-phase epitaxy. Scanning and transmission electron microscopy analyses revealed that Nax CoO2 was heteroepitaxially grown with the CoO2 conducting planes inclined by ∼43° against the α -Al2 O3 substrate surface. The electrical resistivity parallel to the CoO2 planes was ∼1/5 of the perpendicular one, but the parallel Seebeck coefficient was about twice as large as the perpendicular one. Hence, a higher thermoelectric efficiency in the cobaltates can be obtained within the CoO2 planes.",

author = "Kenji Sugiura and Hiromichi Ohta and Nakagawa, \{Shin Ichi\} and Rong Huang and Yuichi Ikuhara and Kenji Nomura and Hideo Hosono and Kunihito Koumoto",

year = "2009",

doi = "10.1063/1.3119631",

language = "英语",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy

AU - Sugiura, Kenji

AU - Ohta, Hiromichi

AU - Nakagawa, Shin Ichi

AU - Huang, Rong

AU - Ikuhara, Yuichi

AU - Nomura, Kenji

AU - Hosono, Hideo

AU - Koumoto, Kunihito

PY - 2009

Y1 - 2009

N2 - Herein we report the anisotropic carrier transport properties of a layered cobaltate, Nax CoO2 epitaxial film grown on the m -plane of an α -Al2 O3 substrate using reactive solid-phase epitaxy. Scanning and transmission electron microscopy analyses revealed that Nax CoO2 was heteroepitaxially grown with the CoO2 conducting planes inclined by ∼43° against the α -Al2 O3 substrate surface. The electrical resistivity parallel to the CoO2 planes was ∼1/5 of the perpendicular one, but the parallel Seebeck coefficient was about twice as large as the perpendicular one. Hence, a higher thermoelectric efficiency in the cobaltates can be obtained within the CoO2 planes.

AB - Herein we report the anisotropic carrier transport properties of a layered cobaltate, Nax CoO2 epitaxial film grown on the m -plane of an α -Al2 O3 substrate using reactive solid-phase epitaxy. Scanning and transmission electron microscopy analyses revealed that Nax CoO2 was heteroepitaxially grown with the CoO2 conducting planes inclined by ∼43° against the α -Al2 O3 substrate surface. The electrical resistivity parallel to the CoO2 planes was ∼1/5 of the perpendicular one, but the parallel Seebeck coefficient was about twice as large as the perpendicular one. Hence, a higher thermoelectric efficiency in the cobaltates can be obtained within the CoO2 planes.

UR - https://www.scopus.com/pages/publications/65349127170

U2 - 10.1063/1.3119631

DO - 10.1063/1.3119631

M3 - 文章

AN - SCOPUS:65349127170

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152105

ER -

Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy

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