Analytical Low Frequency NBTI Compact Modeling with H2 Locking and Electron Fast Capture and Emission

J. Qing; Y. Zeng; X. J. Li; P. J. Zhang; Y. B. Sun; Y. L. Shi

doi:10.1007/s10836-018-5751-8

Analytical Low Frequency NBTI Compact Modeling with H₂ Locking and Electron Fast Capture and Emission

J. Qing
, Y. Zeng
, X. J. Li^*
, P. J. Zhang
, Y. B. Sun
, Y. L. Shi

^*Corresponding author for this work

School of Communication and Electronic Engineering

East China Normal University

Research output: Contribution to journal › Article › peer-review

Abstract

Besides reaction-diffusion theory explaining the generation and passivation of interface trap (ΔN_IT), hole trapping/de-trapping in preexisting gate insulator traps and transient charge occupancy in ΔN_IT are also combined to describe the characteristic of NBTI degradation. However, it is found that H₂ locking effect and Electron Fast Capture/Emission play key roles in the NBTI degradation. In this paper, an analytical low frequency AC NBTI compact model has been proposed to accurately predict the shift in threshold voltage. Two fitting parameters (α and F_FAST) have been introduced to account for the H₂ locking and fast electron capture and emission. The comparison between the proposed model and the experimental data has been carried out, and the results show that our proposed can catch the kinetics of NBTI degradation under low frequency AC stress conditions.

Original language	English
Pages (from-to)	599-605
Number of pages	7
Journal	Journal of Electronic Testing: Theory and Applications (JETTA)
Volume	34
Issue number	5
DOIs	https://doi.org/10.1007/s10836-018-5751-8
State	Published - 1 Oct 2018

Keywords

Fast electron capture/emission
H locking effect
Low frequency
Negative bias temperature instability (NBTI)
Reaction diffusion (RD)

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10.1007/s10836-018-5751-8

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title = "Analytical Low Frequency NBTI Compact Modeling with H2 Locking and Electron Fast Capture and Emission",

abstract = "Besides reaction-diffusion theory explaining the generation and passivation of interface trap (ΔNIT), hole trapping/de-trapping in preexisting gate insulator traps and transient charge occupancy in ΔNIT are also combined to describe the characteristic of NBTI degradation. However, it is found that H2 locking effect and Electron Fast Capture/Emission play key roles in the NBTI degradation. In this paper, an analytical low frequency AC NBTI compact model has been proposed to accurately predict the shift in threshold voltage. Two fitting parameters (α and FFAST) have been introduced to account for the H2 locking and fast electron capture and emission. The comparison between the proposed model and the experimental data has been carried out, and the results show that our proposed can catch the kinetics of NBTI degradation under low frequency AC stress conditions.",

keywords = "Fast electron capture/emission, H locking effect, Low frequency, Negative bias temperature instability (NBTI), Reaction diffusion (RD)",

author = "J. Qing and Y. Zeng and Li, \{X. J.\} and Zhang, \{P. J.\} and Sun, \{Y. B.\} and Shi, \{Y. L.\}",

note = "Publisher Copyright: {\textcopyright} 2018, Springer Science+Business Media, LLC, part of Springer Nature.",

year = "2018",

month = oct,

day = "1",

doi = "10.1007/s10836-018-5751-8",

language = "英语",

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T1 - Analytical Low Frequency NBTI Compact Modeling with H2 Locking and Electron Fast Capture and Emission

AU - Qing, J.

AU - Zeng, Y.

AU - Li, X. J.

AU - Zhang, P. J.

AU - Sun, Y. B.

AU - Shi, Y. L.

PY - 2018/10/1

Y1 - 2018/10/1

N2 - Besides reaction-diffusion theory explaining the generation and passivation of interface trap (ΔNIT), hole trapping/de-trapping in preexisting gate insulator traps and transient charge occupancy in ΔNIT are also combined to describe the characteristic of NBTI degradation. However, it is found that H2 locking effect and Electron Fast Capture/Emission play key roles in the NBTI degradation. In this paper, an analytical low frequency AC NBTI compact model has been proposed to accurately predict the shift in threshold voltage. Two fitting parameters (α and FFAST) have been introduced to account for the H2 locking and fast electron capture and emission. The comparison between the proposed model and the experimental data has been carried out, and the results show that our proposed can catch the kinetics of NBTI degradation under low frequency AC stress conditions.

AB - Besides reaction-diffusion theory explaining the generation and passivation of interface trap (ΔNIT), hole trapping/de-trapping in preexisting gate insulator traps and transient charge occupancy in ΔNIT are also combined to describe the characteristic of NBTI degradation. However, it is found that H2 locking effect and Electron Fast Capture/Emission play key roles in the NBTI degradation. In this paper, an analytical low frequency AC NBTI compact model has been proposed to accurately predict the shift in threshold voltage. Two fitting parameters (α and FFAST) have been introduced to account for the H2 locking and fast electron capture and emission. The comparison between the proposed model and the experimental data has been carried out, and the results show that our proposed can catch the kinetics of NBTI degradation under low frequency AC stress conditions.

KW - Fast electron capture/emission

KW - H locking effect

KW - Low frequency

KW - Negative bias temperature instability (NBTI)

KW - Reaction diffusion (RD)

UR - https://www.scopus.com/pages/publications/85053662989

U2 - 10.1007/s10836-018-5751-8

DO - 10.1007/s10836-018-5751-8

M3 - 文章

AN - SCOPUS:85053662989

SN - 0923-8174

VL - 34

SP - 599

EP - 605

JO - Journal of Electronic Testing: Theory and Applications (JETTA)

JF - Journal of Electronic Testing: Theory and Applications (JETTA)

IS - 5

ER -

Analytical Low Frequency NBTI Compact Modeling with H₂ Locking and Electron Fast Capture and Emission

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Keywords

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