Analysis of Using Negative Capacitance FETs to Optimize Linearity Performance for Voltage Reference Generators

Hongyi Liu; Jian Zhao; Yuhang Zhang; Fan Xiao; Yaxin Liu; Xueqing Li; Xiuyan Li; Yongfu Li

doi:10.1109/TED.2021.3108747

Analysis of Using Negative Capacitance FETs to Optimize Linearity Performance for Voltage Reference Generators

Hongyi Liu, Jian Zhao, Yuhang Zhang, Fan Xiao, Yaxin Liu, Xueqing Li, Xiuyan Li, Yongfu Li

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Emerging voltage reference generators (VRGs) are of great demand for low-power applications in recent years. However, keeping good linearity for VRGs in deep submicrometer process is still challenging. Negative capacitance field-effect transistor (NCFET) is an emerging device, which has been found with a negative differential resistance (NDR) phenomenon and has the potential to be applied in VRGs to optimize their linearity. Hence, the feasibility of using NCFET in an emerging ultralow-power (ULP) VRG is studied in this work. An empirical formula to describe NCFET's NDR is proposed and verified by simulation through a compact SPICE model based on the Landau-Khalatnikov (LK) equation. By adjusting the strength of NDR of NCFET, its output differential resistance can be changed and cancel out the positive differential resistance (PDR) of CMOS transistor. Therefore, the proposed NCFET-based VRG achieves higher linearity. The simulation results show that the line regulation of the NCFET-based VRG decreases from 2.25%/V to 0.21%/V ( $10\times $ ).

Original language	English
Pages (from-to)	5864-5871
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	68
Issue number	11
DOIs	https://doi.org/10.1109/TED.2021.3108747
State	Published - 1 Nov 2021
Externally published	Yes

Keywords

Line regulation
SPICE model
negative capacitance field-effect transistor (NCFET)
negative differential resistance (NDR)
ultralow-power voltage reference generator (ULP VRG)

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10.1109/TED.2021.3108747

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title = "Analysis of Using Negative Capacitance FETs to Optimize Linearity Performance for Voltage Reference Generators",

abstract = "Emerging voltage reference generators (VRGs) are of great demand for low-power applications in recent years. However, keeping good linearity for VRGs in deep submicrometer process is still challenging. Negative capacitance field-effect transistor (NCFET) is an emerging device, which has been found with a negative differential resistance (NDR) phenomenon and has the potential to be applied in VRGs to optimize their linearity. Hence, the feasibility of using NCFET in an emerging ultralow-power (ULP) VRG is studied in this work. An empirical formula to describe NCFET's NDR is proposed and verified by simulation through a compact SPICE model based on the Landau-Khalatnikov (LK) equation. By adjusting the strength of NDR of NCFET, its output differential resistance can be changed and cancel out the positive differential resistance (PDR) of CMOS transistor. Therefore, the proposed NCFET-based VRG achieves higher linearity. The simulation results show that the line regulation of the NCFET-based VRG decreases from 2.25\%/V to 0.21\%/V ( \$10\textbackslash{}times \$ ).",

keywords = "Line regulation, SPICE model, negative capacitance field-effect transistor (NCFET), negative differential resistance (NDR), ultralow-power voltage reference generator (ULP VRG)",

author = "Hongyi Liu and Jian Zhao and Yuhang Zhang and Fan Xiao and Yaxin Liu and Xueqing Li and Xiuyan Li and Yongfu Li",

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AU - Liu, Hongyi

AU - Zhao, Jian

AU - Zhang, Yuhang

AU - Xiao, Fan

AU - Liu, Yaxin

AU - Li, Xueqing

AU - Li, Xiuyan

AU - Li, Yongfu

PY - 2021/11/1

Y1 - 2021/11/1

N2 - Emerging voltage reference generators (VRGs) are of great demand for low-power applications in recent years. However, keeping good linearity for VRGs in deep submicrometer process is still challenging. Negative capacitance field-effect transistor (NCFET) is an emerging device, which has been found with a negative differential resistance (NDR) phenomenon and has the potential to be applied in VRGs to optimize their linearity. Hence, the feasibility of using NCFET in an emerging ultralow-power (ULP) VRG is studied in this work. An empirical formula to describe NCFET's NDR is proposed and verified by simulation through a compact SPICE model based on the Landau-Khalatnikov (LK) equation. By adjusting the strength of NDR of NCFET, its output differential resistance can be changed and cancel out the positive differential resistance (PDR) of CMOS transistor. Therefore, the proposed NCFET-based VRG achieves higher linearity. The simulation results show that the line regulation of the NCFET-based VRG decreases from 2.25%/V to 0.21%/V ( $10\times $ ).

AB - Emerging voltage reference generators (VRGs) are of great demand for low-power applications in recent years. However, keeping good linearity for VRGs in deep submicrometer process is still challenging. Negative capacitance field-effect transistor (NCFET) is an emerging device, which has been found with a negative differential resistance (NDR) phenomenon and has the potential to be applied in VRGs to optimize their linearity. Hence, the feasibility of using NCFET in an emerging ultralow-power (ULP) VRG is studied in this work. An empirical formula to describe NCFET's NDR is proposed and verified by simulation through a compact SPICE model based on the Landau-Khalatnikov (LK) equation. By adjusting the strength of NDR of NCFET, its output differential resistance can be changed and cancel out the positive differential resistance (PDR) of CMOS transistor. Therefore, the proposed NCFET-based VRG achieves higher linearity. The simulation results show that the line regulation of the NCFET-based VRG decreases from 2.25%/V to 0.21%/V ( $10\times $ ).

KW - Line regulation

KW - SPICE model

KW - negative capacitance field-effect transistor (NCFET)

KW - negative differential resistance (NDR)

KW - ultralow-power voltage reference generator (ULP VRG)

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M3 - 文章

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Analysis of Using Negative Capacitance FETs to Optimize Linearity Performance for Voltage Reference Generators

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