Analysis and design of 10 Gb/s, 0.2 μm GaAs PHEMT trans-impedance amplifiers

Shuicheng Cai; Zhigong Wang; Jianjun Gao; En Zhu

Analysis and design of 10 Gb/s, 0.2 μm GaAs PHEMT trans-impedance amplifiers

Shuicheng Cai^*
, Zhigong Wang
, Jianjun Gao
, En Zhu

^*Corresponding author for this work

Southeast University, Nanjing

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A 10 Gb/s low noise preamplifier based on a 0.2 μm GaAs PHEMT is theoretically analyzed, simulated, and taped out for verification. A common-source topology is adopted to reduce the noise and enhance the sensitivity. The test results show that under a single supply voltage of 3.3 V, the preamplifier has a trans-impedance of 57.8 dB·Ω with a bandwidth of over 10 GHz. The chip's area is 0.5 mm × 0.4 mm. According to the test results the preamplifier can operate well at 10 Gb/s.

Original language	English
Pages (from-to)	1808-1813
Number of pages	6
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	27
Issue number	10
State	Published - Oct 2006
Externally published	Yes

Keywords

Noise
PHEMT
Trans-impedance

Cite this

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title = "Analysis and design of 10 Gb/s, 0.2 μm GaAs PHEMT trans-impedance amplifiers",

abstract = "A 10 Gb/s low noise preamplifier based on a 0.2 μm GaAs PHEMT is theoretically analyzed, simulated, and taped out for verification. A common-source topology is adopted to reduce the noise and enhance the sensitivity. The test results show that under a single supply voltage of 3.3 V, the preamplifier has a trans-impedance of 57.8 dB·Ω with a bandwidth of over 10 GHz. The chip's area is 0.5 mm × 0.4 mm. According to the test results the preamplifier can operate well at 10 Gb/s.",

keywords = "Noise, PHEMT, Trans-impedance",

author = "Shuicheng Cai and Zhigong Wang and Jianjun Gao and En Zhu",

year = "2006",

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language = "英语",

volume = "27",

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journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

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TY - JOUR

T1 - Analysis and design of 10 Gb/s, 0.2 μm GaAs PHEMT trans-impedance amplifiers

AU - Cai, Shuicheng

AU - Wang, Zhigong

AU - Gao, Jianjun

AU - Zhu, En

PY - 2006/10

Y1 - 2006/10

N2 - A 10 Gb/s low noise preamplifier based on a 0.2 μm GaAs PHEMT is theoretically analyzed, simulated, and taped out for verification. A common-source topology is adopted to reduce the noise and enhance the sensitivity. The test results show that under a single supply voltage of 3.3 V, the preamplifier has a trans-impedance of 57.8 dB·Ω with a bandwidth of over 10 GHz. The chip's area is 0.5 mm × 0.4 mm. According to the test results the preamplifier can operate well at 10 Gb/s.

AB - A 10 Gb/s low noise preamplifier based on a 0.2 μm GaAs PHEMT is theoretically analyzed, simulated, and taped out for verification. A common-source topology is adopted to reduce the noise and enhance the sensitivity. The test results show that under a single supply voltage of 3.3 V, the preamplifier has a trans-impedance of 57.8 dB·Ω with a bandwidth of over 10 GHz. The chip's area is 0.5 mm × 0.4 mm. According to the test results the preamplifier can operate well at 10 Gb/s.

KW - Noise

KW - PHEMT

KW - Trans-impedance

UR - https://www.scopus.com/pages/publications/33845204680

M3 - 文章

AN - SCOPUS:33845204680

SN - 0253-4177

VL - 27

SP - 1808

EP - 1813

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 10

ER -

Analysis and design of 10 Gb/s, 0.2 μm GaAs PHEMT trans-impedance amplifiers

Abstract

Keywords

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