An ultra-wide-band 3.1-10.6 GHz LNA design in 0.18 μm SiGe BiCMOS

Lei Chen; Chunqi Shi; Runxi Zhang; Ying Ruan; Zongsheng Lai

doi:10.1016/j.aeue.2011.06.004

An ultra-wide-band 3.1-10.6 GHz LNA design in 0.18 μm SiGe BiCMOS

Lei Chen
, Chunqi Shi^*
, Runxi Zhang
, Ying Ruan
, Zongsheng Lai

^*Corresponding author for this work

School of Communication and Electronic Engineering

East China Normal University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A two-stage monolithic ultra-wide-band (UWB) low-noise-amplifier (LNA) designed for MB-OFDM in 0.18 μm SiGe BiCMOS process is presented. With an optimized configuration combining advantages of RES-feedback and LC-ladder matching structure, the adjustable wide input matching is got and noise figure (NF) is controlled to a relevant low status. The measured S21 is from 7.6 to 14.2 dB over the 3-11 GHz operating band, NF is from 3.2 dB to 4.8 dB. With a 2.5 V power supply, the LNA has an overall power consumption of 14.5 mW.

Original language	English
Pages (from-to)	157-161
Number of pages	5
Journal	AEU - International Journal of Electronics and Communications
Volume	66
Issue number	2
DOIs	https://doi.org/10.1016/j.aeue.2011.06.004
State	Published - Feb 2012

Keywords

Low-noise-amplifier (LNA)
Noise figure (NF)
SiGe BiCMOS
UWB

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10.1016/j.aeue.2011.06.004

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title = "An ultra-wide-band 3.1-10.6 GHz LNA design in 0.18 μm SiGe BiCMOS",

abstract = "A two-stage monolithic ultra-wide-band (UWB) low-noise-amplifier (LNA) designed for MB-OFDM in 0.18 μm SiGe BiCMOS process is presented. With an optimized configuration combining advantages of RES-feedback and LC-ladder matching structure, the adjustable wide input matching is got and noise figure (NF) is controlled to a relevant low status. The measured S21 is from 7.6 to 14.2 dB over the 3-11 GHz operating band, NF is from 3.2 dB to 4.8 dB. With a 2.5 V power supply, the LNA has an overall power consumption of 14.5 mW.",

keywords = "Low-noise-amplifier (LNA), Noise figure (NF), SiGe BiCMOS, UWB",

author = "Lei Chen and Chunqi Shi and Runxi Zhang and Ying Ruan and Zongsheng Lai",

year = "2012",

month = feb,

doi = "10.1016/j.aeue.2011.06.004",

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journal = "AEU - International Journal of Electronics and Communications",

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T1 - An ultra-wide-band 3.1-10.6 GHz LNA design in 0.18 μm SiGe BiCMOS

AU - Chen, Lei

AU - Shi, Chunqi

AU - Zhang, Runxi

AU - Ruan, Ying

AU - Lai, Zongsheng

PY - 2012/2

Y1 - 2012/2

N2 - A two-stage monolithic ultra-wide-band (UWB) low-noise-amplifier (LNA) designed for MB-OFDM in 0.18 μm SiGe BiCMOS process is presented. With an optimized configuration combining advantages of RES-feedback and LC-ladder matching structure, the adjustable wide input matching is got and noise figure (NF) is controlled to a relevant low status. The measured S21 is from 7.6 to 14.2 dB over the 3-11 GHz operating band, NF is from 3.2 dB to 4.8 dB. With a 2.5 V power supply, the LNA has an overall power consumption of 14.5 mW.

AB - A two-stage monolithic ultra-wide-band (UWB) low-noise-amplifier (LNA) designed for MB-OFDM in 0.18 μm SiGe BiCMOS process is presented. With an optimized configuration combining advantages of RES-feedback and LC-ladder matching structure, the adjustable wide input matching is got and noise figure (NF) is controlled to a relevant low status. The measured S21 is from 7.6 to 14.2 dB over the 3-11 GHz operating band, NF is from 3.2 dB to 4.8 dB. With a 2.5 V power supply, the LNA has an overall power consumption of 14.5 mW.

KW - Low-noise-amplifier (LNA)

KW - Noise figure (NF)

KW - SiGe BiCMOS

KW - UWB

UR - https://www.scopus.com/pages/publications/84655161894

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DO - 10.1016/j.aeue.2011.06.004

M3 - 文章

AN - SCOPUS:84655161894

SN - 1434-8411

VL - 66

SP - 157

EP - 161

JO - AEU - International Journal of Electronics and Communications

JF - AEU - International Journal of Electronics and Communications

IS - 2

ER -

An ultra-wide-band 3.1-10.6 GHz LNA design in 0.18 μm SiGe BiCMOS

Abstract

Keywords

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