Abstract
In this letter, an improved small-signal equivalent circuit model of InP heterojunction bipolar transistors (HBTs) for millimeter-wave applications is presented. The proposed small-signal model takes into account the parasitic effect in the collector part which can effectively improve the accuracy of S parameter. In the frequency range of 2–110 GHz, good agreements between the measured and model-calculated data can be achieved to demonstrate good modeling accuracy.
| Original language | English |
|---|---|
| Pages (from-to) | 2160-2164 |
| Number of pages | 5 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 63 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 2021 |
Keywords
- device modeling
- heterojunction bipolar transistor (HBT)
- millimeter-wave