TY - JOUR
T1 - An improved small signal model of a mos transistor in millimeter wave band considering longitudinal distributed effects
AU - Xie, Minjie
AU - Sun, Yabin
AU - Shi, Yanling
AU - Li, Xiaojin
N1 - Publisher Copyright:
© Published under licence by IOP Publishing Ltd.
PY - 2024
Y1 - 2024
N2 - Two kinds of distributed effects may appear in a MOS transistor in high frequencies: the non-quasi-static (NQS) effect along the channel and the longitudinal distributed effect (LDE) along the gate finger, especially with long finger length. The former can be modeled by NQS resistance and has been widely adopted, while the latter has not been accurately accounted for. Therefore, in this paper, we first calculate the two-port Y-parameters of a long gate finger MOS transistor considering LDE, using transmission line equations. Then, based on the distributed Y-parameters, a modified small-signal model is proposed. Finally, the modified model is verified by ADS and TCAD simulations. It is demonstrated that within the range of 0.1 GHz to 10 GHz, the maximum error is less than 1%, and even up to 100 GHz, the error does not exceed 5%. The results manifest that the modified model proposed in this paper is adequate for modeling LDE in high frequencies.
AB - Two kinds of distributed effects may appear in a MOS transistor in high frequencies: the non-quasi-static (NQS) effect along the channel and the longitudinal distributed effect (LDE) along the gate finger, especially with long finger length. The former can be modeled by NQS resistance and has been widely adopted, while the latter has not been accurately accounted for. Therefore, in this paper, we first calculate the two-port Y-parameters of a long gate finger MOS transistor considering LDE, using transmission line equations. Then, based on the distributed Y-parameters, a modified small-signal model is proposed. Finally, the modified model is verified by ADS and TCAD simulations. It is demonstrated that within the range of 0.1 GHz to 10 GHz, the maximum error is less than 1%, and even up to 100 GHz, the error does not exceed 5%. The results manifest that the modified model proposed in this paper is adequate for modeling LDE in high frequencies.
UR - https://www.scopus.com/pages/publications/85201263503
U2 - 10.1088/1742-6596/2810/1/012001
DO - 10.1088/1742-6596/2810/1/012001
M3 - 会议文章
AN - SCOPUS:85201263503
SN - 1742-6588
VL - 2810
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - 1
M1 - 012001
T2 - 2024 3rd International Conference on Electronics and Integrated Circuit Technology, EICT 2024
Y2 - 12 April 2024 through 14 April 2024
ER -