An improved small-signal model for GaN HEMTs devices

Jing Bai; Ao Zhang; Jiali Cheng; Jianjun Gao

doi:10.1002/jnm.3237

An improved small-signal model for GaN HEMTs devices

Jing Bai
, Ao Zhang
, Jiali Cheng^*
, Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

An improved small-signal model applied to GaN-based devices is presented in this article. The extrinsic elements of the equivalent circuit topology are extracted using the test structures and the cut-off method. In order to obtain a good agreement between model simulations and measurements, distributed capacitive effects are taken into account. In addition, an inductance L_ds is introduced based on the conventional intrinsic equivalent circuit topology. Good agreement between the modeled and measured S-parameters is obtained for GaN HEMTs with a gate width of 2 × 100 μm (number of gate fingers × unit gate width) in the frequency range of 0.5–40 GHz.

Original language	English
Article number	e3237
Journal	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume	37
Issue number	3
DOIs	https://doi.org/10.1002/jnm.3237
State	Published - 1 May 2024

Keywords

distributed capacitive effects
gallium nitride (GaN)
high electron-mobility transistor (HEMT)
model parameter extraction
small-signal model

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10.1002/jnm.3237

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title = "An improved small-signal model for GaN HEMTs devices",

abstract = "An improved small-signal model applied to GaN-based devices is presented in this article. The extrinsic elements of the equivalent circuit topology are extracted using the test structures and the cut-off method. In order to obtain a good agreement between model simulations and measurements, distributed capacitive effects are taken into account. In addition, an inductance Lds is introduced based on the conventional intrinsic equivalent circuit topology. Good agreement between the modeled and measured S-parameters is obtained for GaN HEMTs with a gate width of 2 × 100 μm (number of gate fingers × unit gate width) in the frequency range of 0.5–40 GHz.",

keywords = "distributed capacitive effects, gallium nitride (GaN), high electron-mobility transistor (HEMT), model parameter extraction, small-signal model",

author = "Jing Bai and Ao Zhang and Jiali Cheng and Jianjun Gao",

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T1 - An improved small-signal model for GaN HEMTs devices

AU - Bai, Jing

AU - Zhang, Ao

AU - Cheng, Jiali

AU - Gao, Jianjun

PY - 2024/5/1

Y1 - 2024/5/1

N2 - An improved small-signal model applied to GaN-based devices is presented in this article. The extrinsic elements of the equivalent circuit topology are extracted using the test structures and the cut-off method. In order to obtain a good agreement between model simulations and measurements, distributed capacitive effects are taken into account. In addition, an inductance Lds is introduced based on the conventional intrinsic equivalent circuit topology. Good agreement between the modeled and measured S-parameters is obtained for GaN HEMTs with a gate width of 2 × 100 μm (number of gate fingers × unit gate width) in the frequency range of 0.5–40 GHz.

AB - An improved small-signal model applied to GaN-based devices is presented in this article. The extrinsic elements of the equivalent circuit topology are extracted using the test structures and the cut-off method. In order to obtain a good agreement between model simulations and measurements, distributed capacitive effects are taken into account. In addition, an inductance Lds is introduced based on the conventional intrinsic equivalent circuit topology. Good agreement between the modeled and measured S-parameters is obtained for GaN HEMTs with a gate width of 2 × 100 μm (number of gate fingers × unit gate width) in the frequency range of 0.5–40 GHz.

KW - distributed capacitive effects

KW - gallium nitride (GaN)

KW - high electron-mobility transistor (HEMT)

KW - model parameter extraction

KW - small-signal model

UR - https://www.scopus.com/pages/publications/85190760179

U2 - 10.1002/jnm.3237

DO - 10.1002/jnm.3237

M3 - 文章

AN - SCOPUS:85190760179

SN - 0894-3370

VL - 37

JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

IS - 3

M1 - e3237

ER -

An improved small-signal model for GaN HEMTs devices

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