An improved pinchoff equivalent circuit model for determining PHEMT model parameters for millimeterwave application

Jianjun Gao; Choi Look Law; Hong Wang; Sheel Aditya

doi:10.1023/A:1020553702157

An improved pinchoff equivalent circuit model for determining PHEMT model parameters for millimeterwave application

Jianjun Gao^*
, Choi Look Law
, Hong Wang
, Sheel Aditya

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

An improved equivalent circuit model under pinchoff condition for extracting parasitic model parameters for Double Heterojunction δ-doped PHEMTs is presented. Good prediction for S parameters and noise performance are obtained up to 40GHz. A modified parameter extraction technique based on this new model was use to determine a PHEMT equivalent circuit model. Signification improvements of the accuracy of S parameters are obtained by using the new pinchoff model.

Original language	English
Pages (from-to)	1611-1626
Number of pages	16
Journal	International Journal of Infrared and Millimeter Waves
Volume	23
Issue number	11
DOIs	https://doi.org/10.1023/A:1020553702157
State	Published - Nov 2002
Externally published	Yes

Keywords

Equivalent circuits
Modeling
PHEMT

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10.1023/A:1020553702157

Cite this

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title = "An improved pinchoff equivalent circuit model for determining PHEMT model parameters for millimeterwave application",

abstract = "An improved equivalent circuit model under pinchoff condition for extracting parasitic model parameters for Double Heterojunction δ-doped PHEMTs is presented. Good prediction for S parameters and noise performance are obtained up to 40GHz. A modified parameter extraction technique based on this new model was use to determine a PHEMT equivalent circuit model. Signification improvements of the accuracy of S parameters are obtained by using the new pinchoff model.",

keywords = "Equivalent circuits, Modeling, PHEMT",

author = "Jianjun Gao and Law, \{Choi Look\} and Hong Wang and Sheel Aditya",

year = "2002",

month = nov,

doi = "10.1023/A:1020553702157",

language = "英语",

volume = "23",

pages = "1611--1626",

journal = "International Journal of Infrared and Millimeter Waves",

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T1 - An improved pinchoff equivalent circuit model for determining PHEMT model parameters for millimeterwave application

AU - Gao, Jianjun

AU - Law, Choi Look

AU - Wang, Hong

AU - Aditya, Sheel

PY - 2002/11

Y1 - 2002/11

N2 - An improved equivalent circuit model under pinchoff condition for extracting parasitic model parameters for Double Heterojunction δ-doped PHEMTs is presented. Good prediction for S parameters and noise performance are obtained up to 40GHz. A modified parameter extraction technique based on this new model was use to determine a PHEMT equivalent circuit model. Signification improvements of the accuracy of S parameters are obtained by using the new pinchoff model.

AB - An improved equivalent circuit model under pinchoff condition for extracting parasitic model parameters for Double Heterojunction δ-doped PHEMTs is presented. Good prediction for S parameters and noise performance are obtained up to 40GHz. A modified parameter extraction technique based on this new model was use to determine a PHEMT equivalent circuit model. Signification improvements of the accuracy of S parameters are obtained by using the new pinchoff model.

KW - Equivalent circuits

KW - Modeling

KW - PHEMT

UR - https://www.scopus.com/pages/publications/1942539130

U2 - 10.1023/A:1020553702157

DO - 10.1023/A:1020553702157

M3 - 文章

AN - SCOPUS:1942539130

SN - 0195-9271

VL - 23

SP - 1611

EP - 1626

JO - International Journal of Infrared and Millimeter Waves

JF - International Journal of Infrared and Millimeter Waves

IS - 11

ER -

An improved pinchoff equivalent circuit model for determining PHEMT model parameters for millimeterwave application

Abstract

Keywords

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