An improved on-wafer measurement method for PHEMT modeling for millimeter wave application

Xiuping Li; Jianjun Gao; Choi Look Law; Sheel Aditya; Georg Boeck

doi:10.1023/A:1026003921968

An improved on-wafer measurement method for PHEMT modeling for millimeter wave application

Xiuping Li, Jianjun Gao, Choi Look Law, Sheel Aditya, Georg Boeck

Research output: Contribution to journal › Article › peer-review

Abstract

An improved on-wafer measurement method by using coaxial calibration instead of on-wafer calibration for PHEMT modeling is proposed in this paper. The advantage is that S-parameters of PHEMT device can be measured on wafer without impedance standard substrate (ISS) after the S-parameters of the microprobes have been determined. Excellent agreement is obtained between on-wafer calibration measurement and coaxial calibration measurements, respectively.

Original language	English
Pages (from-to)	1759-1766
Number of pages	8
Journal	International Journal of Infrared and Millimeter Waves
Volume	24
Issue number	10
DOIs	https://doi.org/10.1023/A:1026003921968
State	Published - Oct 2003
Externally published	Yes

Keywords

Coaxial calibration
Microprobe
On-wafer measurement
PHEMT modeling

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10.1023/A:1026003921968

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title = "An improved on-wafer measurement method for PHEMT modeling for millimeter wave application",

abstract = "An improved on-wafer measurement method by using coaxial calibration instead of on-wafer calibration for PHEMT modeling is proposed in this paper. The advantage is that S-parameters of PHEMT device can be measured on wafer without impedance standard substrate (ISS) after the S-parameters of the microprobes have been determined. Excellent agreement is obtained between on-wafer calibration measurement and coaxial calibration measurements, respectively.",

keywords = "Coaxial calibration, Microprobe, On-wafer measurement, PHEMT modeling",

author = "Xiuping Li and Jianjun Gao and Law, \{Choi Look\} and Sheel Aditya and Georg Boeck",

year = "2003",

month = oct,

doi = "10.1023/A:1026003921968",

language = "英语",

volume = "24",

pages = "1759--1766",

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T1 - An improved on-wafer measurement method for PHEMT modeling for millimeter wave application

AU - Li, Xiuping

AU - Gao, Jianjun

AU - Law, Choi Look

AU - Aditya, Sheel

AU - Boeck, Georg

PY - 2003/10

Y1 - 2003/10

N2 - An improved on-wafer measurement method by using coaxial calibration instead of on-wafer calibration for PHEMT modeling is proposed in this paper. The advantage is that S-parameters of PHEMT device can be measured on wafer without impedance standard substrate (ISS) after the S-parameters of the microprobes have been determined. Excellent agreement is obtained between on-wafer calibration measurement and coaxial calibration measurements, respectively.

AB - An improved on-wafer measurement method by using coaxial calibration instead of on-wafer calibration for PHEMT modeling is proposed in this paper. The advantage is that S-parameters of PHEMT device can be measured on wafer without impedance standard substrate (ISS) after the S-parameters of the microprobes have been determined. Excellent agreement is obtained between on-wafer calibration measurement and coaxial calibration measurements, respectively.

KW - Coaxial calibration

KW - Microprobe

KW - On-wafer measurement

KW - PHEMT modeling

UR - https://www.scopus.com/pages/publications/0347133212

U2 - 10.1023/A:1026003921968

DO - 10.1023/A:1026003921968

M3 - 文章

AN - SCOPUS:0347133212

SN - 0195-9271

VL - 24

SP - 1759

EP - 1766

JO - International Journal of Infrared and Millimeter Waves

JF - International Journal of Infrared and Millimeter Waves

IS - 10

ER -

An improved on-wafer measurement method for PHEMT modeling for millimeter wave application

Abstract

Keywords

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