An Improved Nonlinear Model for Millimeter-Wave InP HBT including DC/AC Dispersion Effects

Ao Zhang; Jianjun Gao

doi:10.1109/LMWC.2021.3068145

An Improved Nonlinear Model for Millimeter-Wave InP HBT including DC/AC Dispersion Effects

Ao Zhang
, Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

An improved millimeter-wave nonlinear model for InP heterojunction bipolar transistor (HBT) is proposed in this letter. The frequency dispersion effect has been taken into account in the Agilent HBT model in Agilent ADS software. Model verification is carried out by comparison of measured and simulated dc and S-parameters up to 110 GHz.

Original language	English
Article number	9383267
Pages (from-to)	465-468
Number of pages	4
Journal	IEEE Microwave and Wireless Components Letters
Volume	31
Issue number	5
DOIs	https://doi.org/10.1109/LMWC.2021.3068145
State	Published - May 2021

Keywords

Device modeling
equivalent circuits
frequency dispersion
heterojunction bipolar transistor (HBT)
millimeter-wave

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10.1109/LMWC.2021.3068145

Cite this

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title = "An Improved Nonlinear Model for Millimeter-Wave InP HBT including DC/AC Dispersion Effects",

abstract = "An improved millimeter-wave nonlinear model for InP heterojunction bipolar transistor (HBT) is proposed in this letter. The frequency dispersion effect has been taken into account in the Agilent HBT model in Agilent ADS software. Model verification is carried out by comparison of measured and simulated dc and S-parameters up to 110 GHz.",

keywords = "Device modeling, equivalent circuits, frequency dispersion, heterojunction bipolar transistor (HBT), millimeter-wave",

author = "Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2001-2012 IEEE.",

year = "2021",

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AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2021/5

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N2 - An improved millimeter-wave nonlinear model for InP heterojunction bipolar transistor (HBT) is proposed in this letter. The frequency dispersion effect has been taken into account in the Agilent HBT model in Agilent ADS software. Model verification is carried out by comparison of measured and simulated dc and S-parameters up to 110 GHz.

AB - An improved millimeter-wave nonlinear model for InP heterojunction bipolar transistor (HBT) is proposed in this letter. The frequency dispersion effect has been taken into account in the Agilent HBT model in Agilent ADS software. Model verification is carried out by comparison of measured and simulated dc and S-parameters up to 110 GHz.

KW - Device modeling

KW - equivalent circuits

KW - frequency dispersion

KW - heterojunction bipolar transistor (HBT)

KW - millimeter-wave

UR - https://www.scopus.com/pages/publications/85103281282

U2 - 10.1109/LMWC.2021.3068145

DO - 10.1109/LMWC.2021.3068145

M3 - 文章

AN - SCOPUS:85103281282

SN - 1531-1309

VL - 31

SP - 465

EP - 468

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 5

M1 - 9383267

ER -

An Improved Nonlinear Model for Millimeter-Wave InP HBT including DC/AC Dispersion Effects

Abstract

Keywords

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