An improved nonlinear model for InP/InGaAs HBTs

Jianjun Gao; Jiali Cheng; Shoulin Li; Huang Wang; Bo Han

An improved nonlinear model for InP/InGaAs HBTs

Jianjun Gao, Jiali Cheng, Shoulin Li, Huang Wang, Bo Han

School of Physics and Electronic Science

East China Normal University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

An empirical DC to high frequency equivalent circuit model for InP HBTs is presented in this paper. The model takes into account the dc soft-knee effect, bias-dependent extrinsic and intrinsic base-collector capacitances. This modeling methodology is successfully applied to predict dc, small-signal S-parameters for an InP/InGaAs HBT.

Original language	English
Title of host publication	2011 China-Japan Joint Microwave Conference Proceedings, CJMW 2011
Pages	622-624
Number of pages	3
State	Published - 2011
Event	2011 China-Japan Joint Microwave Conference, CJMW 2011 - Hangzhou, China Duration: 20 Apr 2011 → 22 Apr 2011

Publication series

Name	2011 China-Japan Joint Microwave Conference Proceedings, CJMW 2011

Conference

Conference	2011 China-Japan Joint Microwave Conference, CJMW 2011
Country/Territory	China
City	Hangzhou
Period	20/04/11 → 22/04/11

Cite this

@inproceedings{b86a86f600ef495092e9890882251a2d,

title = "An improved nonlinear model for InP/InGaAs HBTs",

abstract = "An empirical DC to high frequency equivalent circuit model for InP HBTs is presented in this paper. The model takes into account the dc soft-knee effect, bias-dependent extrinsic and intrinsic base-collector capacitances. This modeling methodology is successfully applied to predict dc, small-signal S-parameters for an InP/InGaAs HBT.",

author = "Jianjun Gao and Jiali Cheng and Shoulin Li and Huang Wang and Bo Han",

year = "2011",

language = "英语",

isbn = "9787308085557",

series = "2011 China-Japan Joint Microwave Conference Proceedings, CJMW 2011",

pages = "622--624",

booktitle = "2011 China-Japan Joint Microwave Conference Proceedings, CJMW 2011",

note = "2011 China-Japan Joint Microwave Conference, CJMW 2011 ; Conference date: 20-04-2011 Through 22-04-2011",

}

TY - GEN

T1 - An improved nonlinear model for InP/InGaAs HBTs

AU - Gao, Jianjun

AU - Cheng, Jiali

AU - Li, Shoulin

AU - Wang, Huang

AU - Han, Bo

PY - 2011

Y1 - 2011

N2 - An empirical DC to high frequency equivalent circuit model for InP HBTs is presented in this paper. The model takes into account the dc soft-knee effect, bias-dependent extrinsic and intrinsic base-collector capacitances. This modeling methodology is successfully applied to predict dc, small-signal S-parameters for an InP/InGaAs HBT.

AB - An empirical DC to high frequency equivalent circuit model for InP HBTs is presented in this paper. The model takes into account the dc soft-knee effect, bias-dependent extrinsic and intrinsic base-collector capacitances. This modeling methodology is successfully applied to predict dc, small-signal S-parameters for an InP/InGaAs HBT.

UR - https://www.scopus.com/pages/publications/79958706034

M3 - 会议稿件

AN - SCOPUS:79958706034

SN - 9787308085557

T3 - 2011 China-Japan Joint Microwave Conference Proceedings, CJMW 2011

SP - 622

EP - 624

BT - 2011 China-Japan Joint Microwave Conference Proceedings, CJMW 2011

T2 - 2011 China-Japan Joint Microwave Conference, CJMW 2011

Y2 - 20 April 2011 through 22 April 2011

ER -

An improved nonlinear model for InP/InGaAs HBTs

Abstract

Publication series

Conference

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