An improved noise model of InP HEMT for millimeter wave application

Zhichun Li; Yuanting Lv; Ao Zhang; Jianjun Gao

doi:10.1002/jnm.3240

An improved noise model of InP HEMT for millimeter wave application

Zhichun Li
, Yuanting Lv
, Ao Zhang
, Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A new temperature noise model, including the influence of gate-drain series resistance R_gd on the noise performance for an InP HEMT, is presented in this article. An equivalent temperature T_gd of R_gd has been taken into account based on Pospieszalski's noise model. The corresponding extraction procedure of noise parameters is given. Good correlation between the simulated and measured noise parameters in the frequency range of 8–50 GHz for a wide range of bias points verify the validity of the improved noise model.

Original language	English
Article number	e3240
Journal	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume	37
Issue number	3
DOIs	https://doi.org/10.1002/jnm.3240
State	Published - 1 May 2024

Keywords

InP high-electron-mobility-transistor
noise equivalent-circuit model
noise parameters

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10.1002/jnm.3240

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title = "An improved noise model of InP HEMT for millimeter wave application",

abstract = "A new temperature noise model, including the influence of gate-drain series resistance Rgd on the noise performance for an InP HEMT, is presented in this article. An equivalent temperature Tgd of Rgd has been taken into account based on Pospieszalski's noise model. The corresponding extraction procedure of noise parameters is given. Good correlation between the simulated and measured noise parameters in the frequency range of 8–50 GHz for a wide range of bias points verify the validity of the improved noise model.",

keywords = "InP high-electron-mobility-transistor, noise equivalent-circuit model, noise parameters",

author = "Zhichun Li and Yuanting Lv and Ao Zhang and Jianjun Gao",

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AU - Li, Zhichun

AU - Lv, Yuanting

AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2024/5/1

Y1 - 2024/5/1

N2 - A new temperature noise model, including the influence of gate-drain series resistance Rgd on the noise performance for an InP HEMT, is presented in this article. An equivalent temperature Tgd of Rgd has been taken into account based on Pospieszalski's noise model. The corresponding extraction procedure of noise parameters is given. Good correlation between the simulated and measured noise parameters in the frequency range of 8–50 GHz for a wide range of bias points verify the validity of the improved noise model.

AB - A new temperature noise model, including the influence of gate-drain series resistance Rgd on the noise performance for an InP HEMT, is presented in this article. An equivalent temperature Tgd of Rgd has been taken into account based on Pospieszalski's noise model. The corresponding extraction procedure of noise parameters is given. Good correlation between the simulated and measured noise parameters in the frequency range of 8–50 GHz for a wide range of bias points verify the validity of the improved noise model.

KW - InP high-electron-mobility-transistor

KW - noise equivalent-circuit model

KW - noise parameters

UR - https://www.scopus.com/pages/publications/85191831748

U2 - 10.1002/jnm.3240

DO - 10.1002/jnm.3240

M3 - 文章

AN - SCOPUS:85191831748

SN - 0894-3370

VL - 37

JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

IS - 3

M1 - e3240

ER -

An improved noise model of InP HEMT for millimeter wave application

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Keywords

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