An improved millimeter-wave small-signal modeling approach for HEMTs

Li Shen; Bo Chen; Jianjun Gao

doi:10.1002/mmce.20787

An improved millimeter-wave small-signal modeling approach for HEMTs

Li Shen, Bo Chen, Jianjun Gao

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

An improved method to determine the small-signal equivalent circuit model for HEMTs is presented in this study, which is combination of the analytical approach and empirical optimization procedure. The parasitic inductances and resistances are extracted under pinch-off condition. The initial intrinsic elements are determined by conventional analytical method. Advanced design system (agilent commercial circuit simulator) is used to optimize the whole model parameters with small deviation of initial values. An excellent agreement between measured and simulated S-parameters is obtained for 2 × 20 μm² gate width HEMT up to 40 GHz.

Original language	English
Pages (from-to)	464-469
Number of pages	6
Journal	International Journal of RF and Microwave Computer-Aided Engineering
Volume	24
Issue number	4
DOIs	https://doi.org/10.1002/mmce.20787
State	Published - Jul 2014

Keywords

HEMT
cold-FET
parameter extraction
pinch-off
small-signal model

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10.1002/mmce.20787

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title = "An improved millimeter-wave small-signal modeling approach for HEMTs",

abstract = "An improved method to determine the small-signal equivalent circuit model for HEMTs is presented in this study, which is combination of the analytical approach and empirical optimization procedure. The parasitic inductances and resistances are extracted under pinch-off condition. The initial intrinsic elements are determined by conventional analytical method. Advanced design system (agilent commercial circuit simulator) is used to optimize the whole model parameters with small deviation of initial values. An excellent agreement between measured and simulated S-parameters is obtained for 2 × 20 μm2 gate width HEMT up to 40 GHz.",

keywords = "HEMT, cold-FET, parameter extraction, pinch-off, small-signal model",

author = "Li Shen and Bo Chen and Jianjun Gao",

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AU - Shen, Li

AU - Chen, Bo

AU - Gao, Jianjun

PY - 2014/7

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N2 - An improved method to determine the small-signal equivalent circuit model for HEMTs is presented in this study, which is combination of the analytical approach and empirical optimization procedure. The parasitic inductances and resistances are extracted under pinch-off condition. The initial intrinsic elements are determined by conventional analytical method. Advanced design system (agilent commercial circuit simulator) is used to optimize the whole model parameters with small deviation of initial values. An excellent agreement between measured and simulated S-parameters is obtained for 2 × 20 μm2 gate width HEMT up to 40 GHz.

AB - An improved method to determine the small-signal equivalent circuit model for HEMTs is presented in this study, which is combination of the analytical approach and empirical optimization procedure. The parasitic inductances and resistances are extracted under pinch-off condition. The initial intrinsic elements are determined by conventional analytical method. Advanced design system (agilent commercial circuit simulator) is used to optimize the whole model parameters with small deviation of initial values. An excellent agreement between measured and simulated S-parameters is obtained for 2 × 20 μm2 gate width HEMT up to 40 GHz.

KW - HEMT

KW - cold-FET

KW - parameter extraction

KW - pinch-off

KW - small-signal model

UR - https://www.scopus.com/pages/publications/84902678886

U2 - 10.1002/mmce.20787

DO - 10.1002/mmce.20787

M3 - 文章

AN - SCOPUS:84902678886

SN - 1096-4290

VL - 24

SP - 464

EP - 469

JO - International Journal of RF and Microwave Computer-Aided Engineering

JF - International Journal of RF and Microwave Computer-Aided Engineering

IS - 4

ER -

An improved millimeter-wave small-signal modeling approach for HEMTs

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Keywords

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