An improved linear modeling technique with sensitivity analysis for GaN HEMT

An improved linear modeling technique for gallium nitride high electron mobility transistor small-signal equivalent circuit under different bias conditions is presented in this paper. The method is a combination of the test structure and sensitivity analytical method to improve the precision of the intrinsic elements in the small-signal model. The analytical expressions for the relative sensitivities with respect to deviations in the measured scattering (S) parameters are also given here. The derived relationships have universal validity, but they have been verified by the good agreement between the measured S-parameters and simulated ones over the frequency range up to 40GHz.