An improved de-embedding procedure for nanometer MOSFET small signal modeling

Ying Zhou; Panpan Yu; Na Yan; Jianjun Gao

doi:10.1016/j.mejo.2016.08.017

An improved de-embedding procedure for nanometer MOSFET small signal modeling

Ying Zhou, Panpan Yu, Na Yan, Jianjun Gao

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

An improved equivalent circuit model of the short test structure for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device modeling is proposed in this paper. The skin effect of the feedlines is taken into account in the proposed model. The corresponding de-embedding method which is different from the conventional open/short de-embedding method is also presented here. A semi-analytical method has been used to determine the MOSFET small signal model parameters. Good agreement is obtained between the simulated and measured results for 90 nm MOSFETs in the frequency range of 1–40 GHz.

Original language	English
Pages (from-to)	60-65
Number of pages	6
Journal	Microelectronics Journal
Volume	57
DOIs	https://doi.org/10.1016/j.mejo.2016.08.017
State	Published - 1 Nov 2016

Keywords

De-embedding
MOSFET
Model
Skin effect

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10.1016/j.mejo.2016.08.017

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title = "An improved de-embedding procedure for nanometer MOSFET small signal modeling",

abstract = "An improved equivalent circuit model of the short test structure for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device modeling is proposed in this paper. The skin effect of the feedlines is taken into account in the proposed model. The corresponding de-embedding method which is different from the conventional open/short de-embedding method is also presented here. A semi-analytical method has been used to determine the MOSFET small signal model parameters. Good agreement is obtained between the simulated and measured results for 90 nm MOSFETs in the frequency range of 1–40 GHz.",

keywords = "De-embedding, MOSFET, Model, Skin effect",

author = "Ying Zhou and Panpan Yu and Na Yan and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2016",

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day = "1",

doi = "10.1016/j.mejo.2016.08.017",

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T1 - An improved de-embedding procedure for nanometer MOSFET small signal modeling

AU - Zhou, Ying

AU - Yu, Panpan

AU - Yan, Na

AU - Gao, Jianjun

PY - 2016/11/1

Y1 - 2016/11/1

N2 - An improved equivalent circuit model of the short test structure for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device modeling is proposed in this paper. The skin effect of the feedlines is taken into account in the proposed model. The corresponding de-embedding method which is different from the conventional open/short de-embedding method is also presented here. A semi-analytical method has been used to determine the MOSFET small signal model parameters. Good agreement is obtained between the simulated and measured results for 90 nm MOSFETs in the frequency range of 1–40 GHz.

AB - An improved equivalent circuit model of the short test structure for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device modeling is proposed in this paper. The skin effect of the feedlines is taken into account in the proposed model. The corresponding de-embedding method which is different from the conventional open/short de-embedding method is also presented here. A semi-analytical method has been used to determine the MOSFET small signal model parameters. Good agreement is obtained between the simulated and measured results for 90 nm MOSFETs in the frequency range of 1–40 GHz.

KW - De-embedding

KW - MOSFET

KW - Model

KW - Skin effect

UR - https://www.scopus.com/pages/publications/84992151594

U2 - 10.1016/j.mejo.2016.08.017

DO - 10.1016/j.mejo.2016.08.017

M3 - 文章

AN - SCOPUS:84992151594

SN - 0026-2692

VL - 57

SP - 60

EP - 65

JO - Microelectronics Journal

JF - Microelectronics Journal

ER -

An improved de-embedding procedure for nanometer MOSFET small signal modeling

Abstract

Keywords

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