An improved DC model for AlGaN/GaN HEMTs

Li Shen; Bo Chen; Ling Sun; Danting Luo; Jianjun Gao

doi:10.1002/mop.29008

An improved DC model for AlGaN/GaN HEMTs

Li Shen, Bo Chen, Ling Sun, Danting Luo, Jianjun Gao

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

An Improved empirical model for the DC I-V characteristics of a GaN High electron mobility transistor (HEMT) is presented in this article. The improvement consists in allowing the Curtice model parameters to vary with gate-source voltage. Model parameter extraction is made for a 100 μm gate-width GaN HEMT. A good agreement is obtained between modeled results and measured results.

Original language	English
Pages (from-to)	1027-1029
Number of pages	3
Journal	Microwave and Optical Technology Letters
Volume	57
Issue number	5
DOIs	https://doi.org/10.1002/mop.29008
State	Published - 1 May 2015

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10.1002/mop.29008

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title = "An improved DC model for AlGaN/GaN HEMTs",

abstract = "An Improved empirical model for the DC I-V characteristics of a GaN High electron mobility transistor (HEMT) is presented in this article. The improvement consists in allowing the Curtice model parameters to vary with gate-source voltage. Model parameter extraction is made for a 100 μm gate-width GaN HEMT. A good agreement is obtained between modeled results and measured results.",

author = "Li Shen and Bo Chen and Ling Sun and Danting Luo and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1027-1029, 2015 {\textcopyright} 2015 Wiley Periodicals, Inc.",

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T1 - An improved DC model for AlGaN/GaN HEMTs

AU - Shen, Li

AU - Chen, Bo

AU - Sun, Ling

AU - Luo, Danting

AU - Gao, Jianjun

PY - 2015/5/1

Y1 - 2015/5/1

N2 - An Improved empirical model for the DC I-V characteristics of a GaN High electron mobility transistor (HEMT) is presented in this article. The improvement consists in allowing the Curtice model parameters to vary with gate-source voltage. Model parameter extraction is made for a 100 μm gate-width GaN HEMT. A good agreement is obtained between modeled results and measured results.

AB - An Improved empirical model for the DC I-V characteristics of a GaN High electron mobility transistor (HEMT) is presented in this article. The improvement consists in allowing the Curtice model parameters to vary with gate-source voltage. Model parameter extraction is made for a 100 μm gate-width GaN HEMT. A good agreement is obtained between modeled results and measured results.

UR - https://www.scopus.com/pages/publications/84925432645

U2 - 10.1002/mop.29008

DO - 10.1002/mop.29008

M3 - 文章

AN - SCOPUS:84925432645

SN - 0895-2477

VL - 57

SP - 1027

EP - 1029

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 5

ER -

An improved DC model for AlGaN/GaN HEMTs

Abstract

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