Abstract
The modeling and parameter extraction of the anti-parallel GaAs Schottky diode for terahertz monolithic-integrated circuit (TMIC) design is proposed in this article. The main advantage is that the anti-parallel air-bridged GaAs Schottky diode pair is considered as an elementary, and the pad distributed effect and air-bridge inductances have been taken into account to improve model accuracy. Good agreement between the measured and simulated two-port S-parameters under turn-on and turn-off biased conditions in the frequency range of 1-170 and 220-325 GHz is obtained. A 220-GHz subharmonic mixer TMIC has been designed successfully to verify the accuracy of the device model.
| Original language | English |
|---|---|
| Pages (from-to) | 431-434 |
| Number of pages | 4 |
| Journal | IEEE Microwave and Wireless Technology Letters |
| Volume | 36 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2026 |
Keywords
- Device modeling
- diode
- parameter extraction
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