An Improved Anti-Parallel Schottky Diode Modeling and Parameter Extraction for Mixer Design

Ao Zhang; Jianjun Gao

doi:10.1109/LMWT.2025.3628934

An Improved Anti-Parallel Schottky Diode Modeling and Parameter Extraction for Mixer Design

Ao Zhang, Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

The modeling and parameter extraction of the anti-parallel GaAs Schottky diode for terahertz monolithic-integrated circuit (TMIC) design is proposed in this article. The main advantage is that the anti-parallel air-bridged GaAs Schottky diode pair is considered as an elementary, and the pad distributed effect and air-bridge inductances have been taken into account to improve model accuracy. Good agreement between the measured and simulated two-port S-parameters under turn-on and turn-off biased conditions in the frequency range of 1-170 and 220-325 GHz is obtained. A 220-GHz subharmonic mixer TMIC has been designed successfully to verify the accuracy of the device model.

Original language	English
Journal	IEEE Microwave and Wireless Technology Letters
DOIs	https://doi.org/10.1109/LMWT.2025.3628934
State	Accepted/In press - 2025

Keywords

Device modeling
diode
parameter extraction

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10.1109/LMWT.2025.3628934

Cite this

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title = "An Improved Anti-Parallel Schottky Diode Modeling and Parameter Extraction for Mixer Design",

abstract = "The modeling and parameter extraction of the anti-parallel GaAs Schottky diode for terahertz monolithic-integrated circuit (TMIC) design is proposed in this article. The main advantage is that the anti-parallel air-bridged GaAs Schottky diode pair is considered as an elementary, and the pad distributed effect and air-bridge inductances have been taken into account to improve model accuracy. Good agreement between the measured and simulated two-port S-parameters under turn-on and turn-off biased conditions in the frequency range of 1-170 and 220-325 GHz is obtained. A 220-GHz subharmonic mixer TMIC has been designed successfully to verify the accuracy of the device model.",

keywords = "Device modeling, diode, parameter extraction",

author = "Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.",

year = "2025",

doi = "10.1109/LMWT.2025.3628934",

language = "英语",

journal = "IEEE Microwave and Wireless Technology Letters",

issn = "2771-957X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - An Improved Anti-Parallel Schottky Diode Modeling and Parameter Extraction for Mixer Design

AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2025

Y1 - 2025

N2 - The modeling and parameter extraction of the anti-parallel GaAs Schottky diode for terahertz monolithic-integrated circuit (TMIC) design is proposed in this article. The main advantage is that the anti-parallel air-bridged GaAs Schottky diode pair is considered as an elementary, and the pad distributed effect and air-bridge inductances have been taken into account to improve model accuracy. Good agreement between the measured and simulated two-port S-parameters under turn-on and turn-off biased conditions in the frequency range of 1-170 and 220-325 GHz is obtained. A 220-GHz subharmonic mixer TMIC has been designed successfully to verify the accuracy of the device model.

AB - The modeling and parameter extraction of the anti-parallel GaAs Schottky diode for terahertz monolithic-integrated circuit (TMIC) design is proposed in this article. The main advantage is that the anti-parallel air-bridged GaAs Schottky diode pair is considered as an elementary, and the pad distributed effect and air-bridge inductances have been taken into account to improve model accuracy. Good agreement between the measured and simulated two-port S-parameters under turn-on and turn-off biased conditions in the frequency range of 1-170 and 220-325 GHz is obtained. A 220-GHz subharmonic mixer TMIC has been designed successfully to verify the accuracy of the device model.

KW - Device modeling

KW - diode

KW - parameter extraction

UR - https://www.scopus.com/pages/publications/105022120549

U2 - 10.1109/LMWT.2025.3628934

DO - 10.1109/LMWT.2025.3628934

M3 - 文章

AN - SCOPUS:105022120549

SN - 2771-957X

JO - IEEE Microwave and Wireless Technology Letters

JF - IEEE Microwave and Wireless Technology Letters

ER -

An Improved Anti-Parallel Schottky Diode Modeling and Parameter Extraction for Mixer Design

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Keywords

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