TY - GEN
T1 - An Empirical Study of Hybrid SSD with Optane and QLC Flash
AU - Chen, Hui
AU - Lv, Yina
AU - Li, Changlong
AU - Gu, Shouzhen
AU - Shi, Liang
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/10
Y1 - 2020/10
N2 - Emerging non-volatile memory (NVM) technologies provide a new way to solve the I/O bottleneck problem. As one of the widely respected solutions, hybrid storage device performance in the real environment is worth studying. Previously, due to the delayed progress of NVM, most of the studies are proceeded on simulated devices. In this paper, an empirical study is presented on the state-of-the-art hybrid storage device - Intel Optane H10, which is designed with Optane Memory and Quad-Level Cell (QLC) NAND flash. Several interesting findings are concluded with the study, which should be well considered during the employment.
AB - Emerging non-volatile memory (NVM) technologies provide a new way to solve the I/O bottleneck problem. As one of the widely respected solutions, hybrid storage device performance in the real environment is worth studying. Previously, due to the delayed progress of NVM, most of the studies are proceeded on simulated devices. In this paper, an empirical study is presented on the state-of-the-art hybrid storage device - Intel Optane H10, which is designed with Optane Memory and Quad-Level Cell (QLC) NAND flash. Several interesting findings are concluded with the study, which should be well considered during the employment.
UR - https://www.scopus.com/pages/publications/85098863380
U2 - 10.1109/ICCD50377.2020.00042
DO - 10.1109/ICCD50377.2020.00042
M3 - 会议稿件
AN - SCOPUS:85098863380
T3 - Proceedings - IEEE International Conference on Computer Design: VLSI in Computers and Processors
SP - 175
EP - 178
BT - Proceedings - 2020 IEEE 38th International Conference on Computer Design, ICCD 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 38th IEEE International Conference on Computer Design, ICCD 2020
Y2 - 18 October 2020 through 21 October 2020
ER -