An empirical noise model for III-V compound semiconductor based HBT

Ao Zhang; Jianjun Gao; Hong Wang

doi:10.1016/j.sse.2019.107679

An empirical noise model for III-V compound semiconductor based HBT

Ao Zhang, Jianjun Gao, Hong Wang

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents a novel approach for the modeling of noise behavior of III-V compound semiconductor based HBT's over a wide frequency range. The main advantage is that the proposed model is based on two individual un-correlated noise sources, and easy to be incorporated with commercial circuit simulation software. The model is verified by measurements of the four noise parameters of an InP HBT up to 20 GHz and a GaAs HBT up to 26 GHz. The good agreements have been obtained.

Original language	English
Article number	107679
Journal	Solid-State Electronics
Volume	163
DOIs	https://doi.org/10.1016/j.sse.2019.107679
State	Published - Jan 2020

Keywords

Equivalent circuit model
HBT
Noise model

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10.1016/j.sse.2019.107679

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title = "An empirical noise model for III-V compound semiconductor based HBT",

abstract = "This paper presents a novel approach for the modeling of noise behavior of III-V compound semiconductor based HBT's over a wide frequency range. The main advantage is that the proposed model is based on two individual un-correlated noise sources, and easy to be incorporated with commercial circuit simulation software. The model is verified by measurements of the four noise parameters of an InP HBT up to 20 GHz and a GaAs HBT up to 26 GHz. The good agreements have been obtained.",

keywords = "Equivalent circuit model, HBT, Noise model",

author = "Ao Zhang and Jianjun Gao and Hong Wang",

note = "Publisher Copyright: {\textcopyright} 2019",

year = "2020",

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doi = "10.1016/j.sse.2019.107679",

language = "英语",

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N2 - This paper presents a novel approach for the modeling of noise behavior of III-V compound semiconductor based HBT's over a wide frequency range. The main advantage is that the proposed model is based on two individual un-correlated noise sources, and easy to be incorporated with commercial circuit simulation software. The model is verified by measurements of the four noise parameters of an InP HBT up to 20 GHz and a GaAs HBT up to 26 GHz. The good agreements have been obtained.

AB - This paper presents a novel approach for the modeling of noise behavior of III-V compound semiconductor based HBT's over a wide frequency range. The main advantage is that the proposed model is based on two individual un-correlated noise sources, and easy to be incorporated with commercial circuit simulation software. The model is verified by measurements of the four noise parameters of an InP HBT up to 20 GHz and a GaAs HBT up to 26 GHz. The good agreements have been obtained.

KW - Equivalent circuit model

KW - HBT

KW - Noise model

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DO - 10.1016/j.sse.2019.107679

M3 - 文章

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SN - 0038-1101

VL - 163

JO - Solid-State Electronics

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An empirical noise model for III-V compound semiconductor based HBT

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Keywords

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