An approach to linear scalable DH-PHEMT model for millimeterwave application

Jianjun Gao; Choi Look Law; Hong Wang; Sheel Aditya

doi:10.1023/A:1021466721452

An approach to linear scalable DH-PHEMT model for millimeterwave application

Jianjun Gao, Choi Look Law, Hong Wang, Sheel Aditya

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

This paper describes a scalable small-signal equivalent circuit for 0.25 μm gatelength Double Heterojunction δ-doped PHEMTs. The scaling rules for all elements except the pad capacitances and bondwire inductances have been determined. Good agreement is obtained between simulation results and measured results for 2 × 20μm 2 × 40μm 2 × 60μm 2 × 100μm gate width (nμumber of gate fingers × unit gate width) DH PHEMT.

Original language	English
Pages (from-to)	1787-1801
Number of pages	15
Journal	International Journal of Infrared and Millimeter Waves
Volume	23
Issue number	12
DOIs	https://doi.org/10.1023/A:1021466721452
State	Published - Dec 2002
Externally published	Yes

Keywords

Equivalent circuits
Modeling
PHEM

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10.1023/A:1021466721452

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title = "An approach to linear scalable DH-PHEMT model for millimeterwave application",

abstract = "This paper describes a scalable small-signal equivalent circuit for 0.25 μm gatelength Double Heterojunction δ-doped PHEMTs. The scaling rules for all elements except the pad capacitances and bondwire inductances have been determined. Good agreement is obtained between simulation results and measured results for 2 × 20μm 2 × 40μm 2 × 60μm 2 × 100μm gate width (nμumber of gate fingers × unit gate width) DH PHEMT.",

keywords = "Equivalent circuits, Modeling, PHEM",

author = "Jianjun Gao and Law, \{Choi Look\} and Hong Wang and Sheel Aditya",

year = "2002",

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AU - Wang, Hong

AU - Aditya, Sheel

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Y1 - 2002/12

N2 - This paper describes a scalable small-signal equivalent circuit for 0.25 μm gatelength Double Heterojunction δ-doped PHEMTs. The scaling rules for all elements except the pad capacitances and bondwire inductances have been determined. Good agreement is obtained between simulation results and measured results for 2 × 20μm 2 × 40μm 2 × 60μm 2 × 100μm gate width (nμumber of gate fingers × unit gate width) DH PHEMT.

AB - This paper describes a scalable small-signal equivalent circuit for 0.25 μm gatelength Double Heterojunction δ-doped PHEMTs. The scaling rules for all elements except the pad capacitances and bondwire inductances have been determined. Good agreement is obtained between simulation results and measured results for 2 × 20μm 2 × 40μm 2 × 60μm 2 × 100μm gate width (nμumber of gate fingers × unit gate width) DH PHEMT.

KW - Equivalent circuits

KW - Modeling

KW - PHEM

UR - https://www.scopus.com/pages/publications/1942507354

U2 - 10.1023/A:1021466721452

DO - 10.1023/A:1021466721452

M3 - 文章

AN - SCOPUS:1942507354

SN - 0195-9271

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JO - International Journal of Infrared and Millimeter Waves

JF - International Journal of Infrared and Millimeter Waves

IS - 12

ER -

An approach to linear scalable DH-PHEMT model for millimeterwave application

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Keywords

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