An approach to determining parasitic elements for laser diodes

Gao Jianjun; Gao Baoxin; Pan Bo; Liang Chunguang

doi:10.1002/mop.10414

An approach to determining parasitic elements for laser diodes

Gao Jianjun^*
, Gao Baoxin
, Pan Bo
, Liang Chunguang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A simple way to extract the parasitic elements of the laser diode model is proposed. The parasitic elements are determined by directly using measured S₁₁ parameters versus frequency at zero bias point and above threshold current bias point. Thus the need for optimization during the extraction is reduced, and excellent agreement has been achieved between the experimental and calculated results.

Original language	English
Pages (from-to)	191-193
Number of pages	3
Journal	Microwave and Optical Technology Letters
Volume	34
Issue number	3
DOIs	https://doi.org/10.1002/mop.10414
State	Published - 5 Aug 2002
Externally published	Yes

Keywords

Laser diode
Modeling
Parameter extraction

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10.1002/mop.10414

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title = "An approach to determining parasitic elements for laser diodes",

abstract = "A simple way to extract the parasitic elements of the laser diode model is proposed. The parasitic elements are determined by directly using measured S11 parameters versus frequency at zero bias point and above threshold current bias point. Thus the need for optimization during the extraction is reduced, and excellent agreement has been achieved between the experimental and calculated results.",

keywords = "Laser diode, Modeling, Parameter extraction",

author = "Gao Jianjun and Gao Baoxin and Pan Bo and Liang Chunguang",

year = "2002",

month = aug,

day = "5",

doi = "10.1002/mop.10414",

language = "英语",

volume = "34",

pages = "191--193",

journal = "Microwave and Optical Technology Letters",

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T1 - An approach to determining parasitic elements for laser diodes

AU - Jianjun, Gao

AU - Baoxin, Gao

AU - Bo, Pan

AU - Chunguang, Liang

PY - 2002/8/5

Y1 - 2002/8/5

N2 - A simple way to extract the parasitic elements of the laser diode model is proposed. The parasitic elements are determined by directly using measured S11 parameters versus frequency at zero bias point and above threshold current bias point. Thus the need for optimization during the extraction is reduced, and excellent agreement has been achieved between the experimental and calculated results.

AB - A simple way to extract the parasitic elements of the laser diode model is proposed. The parasitic elements are determined by directly using measured S11 parameters versus frequency at zero bias point and above threshold current bias point. Thus the need for optimization during the extraction is reduced, and excellent agreement has been achieved between the experimental and calculated results.

KW - Laser diode

KW - Modeling

KW - Parameter extraction

UR - https://www.scopus.com/pages/publications/0037025743

U2 - 10.1002/mop.10414

DO - 10.1002/mop.10414

M3 - 文章

AN - SCOPUS:0037025743

SN - 0895-2477

VL - 34

SP - 191

EP - 193

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 3

ER -

An approach to determining parasitic elements for laser diodes

Abstract

Keywords

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