An approach to determine small-signal model parameters for InP HBT up to 110 GHz

Ao Zhang; Yi Xin Zhang; Bo Ran Wang; Jian Jun Gao

doi:10.11972/j.issn.1001-9014.2018.06.009

An approach to determine small-signal model parameters for InP HBT up to 110 GHz

Ao Zhang
, Yi Xin Zhang
, Bo Ran Wang
, Jian Jun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

An approach for determination of small-signal equivalent circuit model elements for InP HBT is presented in this paper. The skin effect of the feedlines is taken into account in the proposed model. This method combines the analytical approach and empirical optimization procedure. The intrinsic elements determined by a conventional analytical parameter transformation technique are described as function of extrinsic resistances. An excellent fit between measured and simulated S-parameters in the frequency range of 2~110 GHz is obtained for InP HBT.

Translated title of the contribution	110 GHz铟磷异质结双极晶体管小信号模型参数提取方法
Original language	English
Pages (from-to)	688-692
Number of pages	5
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	37
Issue number	6
DOIs	https://doi.org/10.11972/j.issn.1001-9014.2018.06.009
State	Published - 1 Dec 2018

Keywords

Device modeling
Equivalent circuits
Heterojunction bipolar transistor(HBT)

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10.11972/j.issn.1001-9014.2018.06.009

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title = "An approach to determine small-signal model parameters for InP HBT up to 110 GHz",

abstract = "An approach for determination of small-signal equivalent circuit model elements for InP HBT is presented in this paper. The skin effect of the feedlines is taken into account in the proposed model. This method combines the analytical approach and empirical optimization procedure. The intrinsic elements determined by a conventional analytical parameter transformation technique are described as function of extrinsic resistances. An excellent fit between measured and simulated S-parameters in the frequency range of 2\textasciitilde{}110 GHz is obtained for InP HBT.",

keywords = "Device modeling, Equivalent circuits, Heterojunction bipolar transistor(HBT)",

author = "Ao Zhang and Zhang, \{Yi Xin\} and Wang, \{Bo Ran\} and Gao, \{Jian Jun\}",

year = "2018",

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doi = "10.11972/j.issn.1001-9014.2018.06.009",

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T1 - An approach to determine small-signal model parameters for InP HBT up to 110 GHz

AU - Zhang, Ao

AU - Zhang, Yi Xin

AU - Wang, Bo Ran

AU - Gao, Jian Jun

PY - 2018/12/1

Y1 - 2018/12/1

N2 - An approach for determination of small-signal equivalent circuit model elements for InP HBT is presented in this paper. The skin effect of the feedlines is taken into account in the proposed model. This method combines the analytical approach and empirical optimization procedure. The intrinsic elements determined by a conventional analytical parameter transformation technique are described as function of extrinsic resistances. An excellent fit between measured and simulated S-parameters in the frequency range of 2~110 GHz is obtained for InP HBT.

AB - An approach for determination of small-signal equivalent circuit model elements for InP HBT is presented in this paper. The skin effect of the feedlines is taken into account in the proposed model. This method combines the analytical approach and empirical optimization procedure. The intrinsic elements determined by a conventional analytical parameter transformation technique are described as function of extrinsic resistances. An excellent fit between measured and simulated S-parameters in the frequency range of 2~110 GHz is obtained for InP HBT.

KW - Device modeling

KW - Equivalent circuits

KW - Heterojunction bipolar transistor(HBT)

UR - https://www.scopus.com/pages/publications/85060599449

U2 - 10.11972/j.issn.1001-9014.2018.06.009

DO - 10.11972/j.issn.1001-9014.2018.06.009

M3 - 文章

AN - SCOPUS:85060599449

SN - 1001-9014

VL - 37

SP - 688

EP - 692

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 6

ER -

An approach to determine small-signal model parameters for InP HBT up to 110 GHz

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Keywords

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