An approach to determine small-signal model parameters for InP-based heterojunction bipolar transistors

Jianjun Gao; Xiuping Li; Hong Wang; Georg Boeck

doi:10.1109/TSM.2005.863222

An approach to determine small-signal model parameters for InP-based heterojunction bipolar transistors

Jianjun Gao^*
, Xiuping Li
, Hong Wang
, Georg Boeck

^*Corresponding author for this work

IEEE
Southeast University, Nanjing
Beijing University of Posts and Telecommunications
Nanyang Technological University
Technical University of Berlin

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

A new method for the extraction of the small-signal model parameters of InP-based heterojunction bipolar transistors (HBT) is proposed. The approach is based on the combination of the analytical and optimization technology. The initial values of the parasitic pad capacitances are extracted by using a set of closed-form expressions derived from cutoff mode S-parameters without any test structure, and the intrinsic elements determined by using the analytical method are described as functions of the parasitic elements. An advanced design system is then used to optimize only the parasitic parameters with very small dispersion of initial values. Good agreement is obtained between simulated and measured results for an InP HBT with 5×5 μm ² emitter area over a wide range of bias points up to 40 GHz.

Original language	English
Pages (from-to)	138-145
Number of pages	8
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	19
Issue number	1
DOIs	https://doi.org/10.1109/TSM.2005.863222
State	Published - Feb 2006
Externally published	Yes

Keywords

Heterojunction bipolar transistor (HBT)
Modeling
Parameter extraction

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abstract = "A new method for the extraction of the small-signal model parameters of InP-based heterojunction bipolar transistors (HBT) is proposed. The approach is based on the combination of the analytical and optimization technology. The initial values of the parasitic pad capacitances are extracted by using a set of closed-form expressions derived from cutoff mode S-parameters without any test structure, and the intrinsic elements determined by using the analytical method are described as functions of the parasitic elements. An advanced design system is then used to optimize only the parasitic parameters with very small dispersion of initial values. Good agreement is obtained between simulated and measured results for an InP HBT with 5×5 μm 2 emitter area over a wide range of bias points up to 40 GHz.",

keywords = "Heterojunction bipolar transistor (HBT), Modeling, Parameter extraction",

author = "Jianjun Gao and Xiuping Li and Hong Wang and Georg Boeck",

year = "2006",

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T1 - An approach to determine small-signal model parameters for InP-based heterojunction bipolar transistors

AU - Gao, Jianjun

AU - Li, Xiuping

AU - Wang, Hong

AU - Boeck, Georg

PY - 2006/2

Y1 - 2006/2

N2 - A new method for the extraction of the small-signal model parameters of InP-based heterojunction bipolar transistors (HBT) is proposed. The approach is based on the combination of the analytical and optimization technology. The initial values of the parasitic pad capacitances are extracted by using a set of closed-form expressions derived from cutoff mode S-parameters without any test structure, and the intrinsic elements determined by using the analytical method are described as functions of the parasitic elements. An advanced design system is then used to optimize only the parasitic parameters with very small dispersion of initial values. Good agreement is obtained between simulated and measured results for an InP HBT with 5×5 μm 2 emitter area over a wide range of bias points up to 40 GHz.

AB - A new method for the extraction of the small-signal model parameters of InP-based heterojunction bipolar transistors (HBT) is proposed. The approach is based on the combination of the analytical and optimization technology. The initial values of the parasitic pad capacitances are extracted by using a set of closed-form expressions derived from cutoff mode S-parameters without any test structure, and the intrinsic elements determined by using the analytical method are described as functions of the parasitic elements. An advanced design system is then used to optimize only the parasitic parameters with very small dispersion of initial values. Good agreement is obtained between simulated and measured results for an InP HBT with 5×5 μm 2 emitter area over a wide range of bias points up to 40 GHz.

KW - Heterojunction bipolar transistor (HBT)

KW - Modeling

KW - Parameter extraction

UR - https://www.scopus.com/pages/publications/33144486100

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DO - 10.1109/TSM.2005.863222

M3 - 文章

AN - SCOPUS:33144486100

SN - 0894-6507

VL - 19

SP - 138

EP - 145

JO - IEEE Transactions on Semiconductor Manufacturing

JF - IEEE Transactions on Semiconductor Manufacturing

IS - 1

ER -

An approach to determine small-signal model parameters for InP-based heterojunction bipolar transistors

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Keywords

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