An approach to determine cutoff frequency and maximum oscillation frequency of common emitter heterojunction bipolar transistor

Ao Zhang; Jianjun Gao

doi:10.1002/jnm.2545

An approach to determine cutoff frequency and maximum oscillation frequency of common emitter heterojunction bipolar transistor

Ao Zhang, Jianjun Gao

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Analytical expressions for the short-circuit current gain and unilateral power gain of common emitter heterojunction bipolar transistor (HBT) are presented in this paper. These expressions are derived from a simplified π-type small signal equivalent circuit model, which takes into account the influence of the extrinsic resistances and base-collector capacitance distributed nature. Good agreement is obtained between measured and calculated results for both two indium phosphide (InP) HBT devices and a gallium arsenide (GaAs) HBT device over a wide range of bias points.

Original language	English
Article number	e2545
Journal	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume	33
Issue number	3
DOIs	https://doi.org/10.1002/jnm.2545
State	Published - 1 May 2020

Keywords

heterojunction bipolar transistor
parameter extraction
short-circuit current gain
small signal model
unilateral power gain

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10.1002/jnm.2545

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title = "An approach to determine cutoff frequency and maximum oscillation frequency of common emitter heterojunction bipolar transistor",

abstract = "Analytical expressions for the short-circuit current gain and unilateral power gain of common emitter heterojunction bipolar transistor (HBT) are presented in this paper. These expressions are derived from a simplified π-type small signal equivalent circuit model, which takes into account the influence of the extrinsic resistances and base-collector capacitance distributed nature. Good agreement is obtained between measured and calculated results for both two indium phosphide (InP) HBT devices and a gallium arsenide (GaAs) HBT device over a wide range of bias points.",

keywords = "heterojunction bipolar transistor, parameter extraction, short-circuit current gain, small signal model, unilateral power gain",

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T1 - An approach to determine cutoff frequency and maximum oscillation frequency of common emitter heterojunction bipolar transistor

AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2020/5/1

Y1 - 2020/5/1

N2 - Analytical expressions for the short-circuit current gain and unilateral power gain of common emitter heterojunction bipolar transistor (HBT) are presented in this paper. These expressions are derived from a simplified π-type small signal equivalent circuit model, which takes into account the influence of the extrinsic resistances and base-collector capacitance distributed nature. Good agreement is obtained between measured and calculated results for both two indium phosphide (InP) HBT devices and a gallium arsenide (GaAs) HBT device over a wide range of bias points.

AB - Analytical expressions for the short-circuit current gain and unilateral power gain of common emitter heterojunction bipolar transistor (HBT) are presented in this paper. These expressions are derived from a simplified π-type small signal equivalent circuit model, which takes into account the influence of the extrinsic resistances and base-collector capacitance distributed nature. Good agreement is obtained between measured and calculated results for both two indium phosphide (InP) HBT devices and a gallium arsenide (GaAs) HBT device over a wide range of bias points.

KW - heterojunction bipolar transistor

KW - parameter extraction

KW - short-circuit current gain

KW - small signal model

KW - unilateral power gain

UR - https://www.scopus.com/pages/publications/85059662859

U2 - 10.1002/jnm.2545

DO - 10.1002/jnm.2545

M3 - 文章

AN - SCOPUS:85059662859

SN - 0894-3370

VL - 33

JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

IS - 3

M1 - e2545

ER -

An approach to determine cutoff frequency and maximum oscillation frequency of common emitter heterojunction bipolar transistor

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Keywords

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