An approach for determining thermal resistance model parameters of SiGe HBT

Boran Wang; Ao Zhang; Yixin Zhang; Jianjun Gao

doi:10.1002/jnm.2616

An approach for determining thermal resistance model parameters of SiGe HBT

Boran Wang
, Ao Zhang
, Yixin Zhang
, Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

This paper presents an improved method for determining the thermal resistance and junction temperature for silicon germanium heterojunction bipolar transistors. This method is a full analytical procedure without any iteration based on a set of accurate expressions. The thermal resistance is tested against iterative and analytic methods reported before. Good agreement is obtained between simulated and measured results for three SiGe devices with different emitter geometries.

Original language	English
Article number	e2616
Journal	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume	33
Issue number	3
DOIs	https://doi.org/10.1002/jnm.2616
State	Published - 1 May 2020

Keywords

analytic method
back end of line (BEOL)
silicon germanium heterojunction bipolar transistors
thermal resistance

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10.1002/jnm.2616

Cite this

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title = "An approach for determining thermal resistance model parameters of SiGe HBT",

abstract = "This paper presents an improved method for determining the thermal resistance and junction temperature for silicon germanium heterojunction bipolar transistors. This method is a full analytical procedure without any iteration based on a set of accurate expressions. The thermal resistance is tested against iterative and analytic methods reported before. Good agreement is obtained between simulated and measured results for three SiGe devices with different emitter geometries.",

keywords = "analytic method, back end of line (BEOL), silicon germanium heterojunction bipolar transistors, thermal resistance",

author = "Boran Wang and Ao Zhang and Yixin Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2019 John Wiley \& Sons, Ltd.",

year = "2020",

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AU - Wang, Boran

AU - Zhang, Ao

AU - Zhang, Yixin

AU - Gao, Jianjun

PY - 2020/5/1

Y1 - 2020/5/1

N2 - This paper presents an improved method for determining the thermal resistance and junction temperature for silicon germanium heterojunction bipolar transistors. This method is a full analytical procedure without any iteration based on a set of accurate expressions. The thermal resistance is tested against iterative and analytic methods reported before. Good agreement is obtained between simulated and measured results for three SiGe devices with different emitter geometries.

AB - This paper presents an improved method for determining the thermal resistance and junction temperature for silicon germanium heterojunction bipolar transistors. This method is a full analytical procedure without any iteration based on a set of accurate expressions. The thermal resistance is tested against iterative and analytic methods reported before. Good agreement is obtained between simulated and measured results for three SiGe devices with different emitter geometries.

KW - analytic method

KW - back end of line (BEOL)

KW - silicon germanium heterojunction bipolar transistors

KW - thermal resistance

UR - https://www.scopus.com/pages/publications/85066144521

U2 - 10.1002/jnm.2616

DO - 10.1002/jnm.2616

M3 - 文章

AN - SCOPUS:85066144521

SN - 0894-3370

VL - 33

JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

IS - 3

M1 - e2616

ER -

An approach for determining thermal resistance model parameters of SiGe HBT

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Keywords

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