An approach for determining mosfet small-signal circuit model parameters

An extraction method for small-signal model parameters of a MOSFET is described. The direct extraction of small-signal MESFET equivalent circuit from S-parameters involves the determination of parasitic inductances and resistance. The proposed method can be used to determine a MOSFET equivalent circuit and substrate-related parameters. This method is a combination of the analytical and optimization extraction method. The proposed method is based on the assumption that the equivalent circuit is valid of the all frequency range. The intrinsic elements can be expressed as a function of the extrinsic resistance. It was observed that the extracted parameters remain constant with frequency. The ADS can be used to optimize the parasitics with small dispersion of initial values.