Amorphous ZrO2Tunnel Junction Memristor with a Tunneling Electroresistance Ratio above 400

Fenning Liu; Yue Peng; Yan Liu; Genquan Han; Wenwu Xiao; Bobo Tian; Ni Zhong; Hui Peng; Chungang Duan; Yue Hao

doi:10.1109/LED.2021.3069837

Amorphous ZrO₂Tunnel Junction Memristor with a Tunneling Electroresistance Ratio above 400

Fenning Liu, Yue Peng, Yan Liu, Genquan Han, Wenwu Xiao, Bobo Tian, Ni Zhong, Hui Peng, Chungang Duan, Yue Hao

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

An amorphous ZrO2 based tunneling junction memristor (TJM) with a tunneling electroresistance (TER) ratio above 400 is demonstrated. It is attributed to the modulation of tunneling barrier width induced by the accumulation of oxygen vacancies ( V_{O}{+} ) and negative charges near the ZrO2/semiconductor interface. The ferroelectric-like behaviors attributed to the voltage-modulated switching of the dipoles consisting of V_{O}{+} and negative charges in ZrO2 are characterized by a polarization-voltage test. The ZrO2 TJM achieves a TER ratio above 400 under 2.5/-1.5 V at 100 ns write/erase pulse condition, over 104 cycles program/erase endurance, and >104 s data retention.

Original language	English
Article number	9390296
Pages (from-to)	696-699
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	42
Issue number	5
DOIs	https://doi.org/10.1109/LED.2021.3069837
State	Published - May 2021

Keywords

FTJ
Ferroelectric
memoristor
oxygen vacancy
tunneling electroresistance
tunneling junction

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10.1109/LED.2021.3069837

Cite this

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title = "Amorphous ZrO2Tunnel Junction Memristor with a Tunneling Electroresistance Ratio above 400",

abstract = "An amorphous ZrO2 based tunneling junction memristor (TJM) with a tunneling electroresistance (TER) ratio above 400 is demonstrated. It is attributed to the modulation of tunneling barrier width induced by the accumulation of oxygen vacancies ( V\_\{O\}\{+\} ) and negative charges near the ZrO2/semiconductor interface. The ferroelectric-like behaviors attributed to the voltage-modulated switching of the dipoles consisting of V\_\{O\}\{+\} and negative charges in ZrO2 are characterized by a polarization-voltage test. The ZrO2 TJM achieves a TER ratio above 400 under 2.5/-1.5 V at 100 ns write/erase pulse condition, over 104 cycles program/erase endurance, and >104 s data retention.",

keywords = "FTJ, Ferroelectric, memoristor, oxygen vacancy, tunneling electroresistance, tunneling junction",

author = "Fenning Liu and Yue Peng and Yan Liu and Genquan Han and Wenwu Xiao and Bobo Tian and Ni Zhong and Hui Peng and Chungang Duan and Yue Hao",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2021",

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doi = "10.1109/LED.2021.3069837",

language = "英语",

volume = "42",

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journal = "IEEE Electron Device Letters",

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T1 - Amorphous ZrO2Tunnel Junction Memristor with a Tunneling Electroresistance Ratio above 400

AU - Liu, Fenning

AU - Peng, Yue

AU - Liu, Yan

AU - Han, Genquan

AU - Xiao, Wenwu

AU - Tian, Bobo

AU - Zhong, Ni

AU - Peng, Hui

AU - Duan, Chungang

AU - Hao, Yue

PY - 2021/5

Y1 - 2021/5

N2 - An amorphous ZrO2 based tunneling junction memristor (TJM) with a tunneling electroresistance (TER) ratio above 400 is demonstrated. It is attributed to the modulation of tunneling barrier width induced by the accumulation of oxygen vacancies ( V_{O}{+} ) and negative charges near the ZrO2/semiconductor interface. The ferroelectric-like behaviors attributed to the voltage-modulated switching of the dipoles consisting of V_{O}{+} and negative charges in ZrO2 are characterized by a polarization-voltage test. The ZrO2 TJM achieves a TER ratio above 400 under 2.5/-1.5 V at 100 ns write/erase pulse condition, over 104 cycles program/erase endurance, and >104 s data retention.

AB - An amorphous ZrO2 based tunneling junction memristor (TJM) with a tunneling electroresistance (TER) ratio above 400 is demonstrated. It is attributed to the modulation of tunneling barrier width induced by the accumulation of oxygen vacancies ( V_{O}{+} ) and negative charges near the ZrO2/semiconductor interface. The ferroelectric-like behaviors attributed to the voltage-modulated switching of the dipoles consisting of V_{O}{+} and negative charges in ZrO2 are characterized by a polarization-voltage test. The ZrO2 TJM achieves a TER ratio above 400 under 2.5/-1.5 V at 100 ns write/erase pulse condition, over 104 cycles program/erase endurance, and >104 s data retention.

KW - FTJ

KW - Ferroelectric

KW - memoristor

KW - oxygen vacancy

KW - tunneling electroresistance

KW - tunneling junction

UR - https://www.scopus.com/pages/publications/85103781337

U2 - 10.1109/LED.2021.3069837

DO - 10.1109/LED.2021.3069837

M3 - 文章

AN - SCOPUS:85103781337

SN - 0741-3106

VL - 42

SP - 696

EP - 699

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

M1 - 9390296

ER -

Amorphous ZrO₂Tunnel Junction Memristor with a Tunneling Electroresistance Ratio above 400

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Keywords

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