Amorphization induced in crystalline GeSb2Te4 films by single femtosecond pulses

Su Mei Huang; Cai Xia Jin; Shi Yong Huang; Yi Mei Chen; Zhen Jie Zhao; Zhuo Sun

Amorphization induced in crystalline GeSb₂Te₄ films by single femtosecond pulses

Su Mei Huang^*, Cai Xia Jin, Shi Yong Huang, Yi Mei Chen, Zhen Jie Zhao, Zhuo Sun

^*Corresponding author for this work

East China Normal University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The dynamics and the conditions of amorphous transitions induced in a GeSb₂Te₄ system upon a single 108 fs pulse melting were studied by real-time optical microscope measurements. The system has a multilayer structure of 100 nm ZnS-SiO₂/35 nm GeSb₂Te₄/120 nm ZnS-SiO₂/0.6 mm polycarbonate substrate. The amorphization is completed within 2.6 ns. The thickness of the phase change layer plays an important role in controlling the heat flow conditions in the system upon a fs pulse irradiation. The relative thermal process and effects are analyzed. The mechanism of crystalline to amorphous transition triggered by single femtosecond laser pulse is discussed.

Original language	English
Pages (from-to)	156-159
Number of pages	4
Journal	Zhongguo Jiguang/Chinese Journal of Lasers
Volume	34
Issue number	SUPPL.
State	Published - Apr 2007
Externally published	Yes

Keywords

Femtosecond laser
Optic disk
Optical recording
Phase change
Pumping detection
Thin film

Cite this

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title = "Amorphization induced in crystalline GeSb2Te4 films by single femtosecond pulses",

abstract = "The dynamics and the conditions of amorphous transitions induced in a GeSb2Te4 system upon a single 108 fs pulse melting were studied by real-time optical microscope measurements. The system has a multilayer structure of 100 nm ZnS-SiO2/35 nm GeSb2Te4/120 nm ZnS-SiO2/0.6 mm polycarbonate substrate. The amorphization is completed within 2.6 ns. The thickness of the phase change layer plays an important role in controlling the heat flow conditions in the system upon a fs pulse irradiation. The relative thermal process and effects are analyzed. The mechanism of crystalline to amorphous transition triggered by single femtosecond laser pulse is discussed.",

keywords = "Femtosecond laser, Optic disk, Optical recording, Phase change, Pumping detection, Thin film",

author = "Huang, \{Su Mei\} and Jin, \{Cai Xia\} and Huang, \{Shi Yong\} and Chen, \{Yi Mei\} and Zhao, \{Zhen Jie\} and Zhuo Sun",

year = "2007",

month = apr,

language = "英语",

volume = "34",

pages = "156--159",

journal = "Zhongguo Jiguang/Chinese Journal of Lasers",

issn = "0258-7025",

publisher = "Science Press ",

number = "SUPPL.",

}

TY - JOUR

T1 - Amorphization induced in crystalline GeSb2Te4 films by single femtosecond pulses

AU - Huang, Su Mei

AU - Jin, Cai Xia

AU - Huang, Shi Yong

AU - Chen, Yi Mei

AU - Zhao, Zhen Jie

AU - Sun, Zhuo

PY - 2007/4

Y1 - 2007/4

N2 - The dynamics and the conditions of amorphous transitions induced in a GeSb2Te4 system upon a single 108 fs pulse melting were studied by real-time optical microscope measurements. The system has a multilayer structure of 100 nm ZnS-SiO2/35 nm GeSb2Te4/120 nm ZnS-SiO2/0.6 mm polycarbonate substrate. The amorphization is completed within 2.6 ns. The thickness of the phase change layer plays an important role in controlling the heat flow conditions in the system upon a fs pulse irradiation. The relative thermal process and effects are analyzed. The mechanism of crystalline to amorphous transition triggered by single femtosecond laser pulse is discussed.

AB - The dynamics and the conditions of amorphous transitions induced in a GeSb2Te4 system upon a single 108 fs pulse melting were studied by real-time optical microscope measurements. The system has a multilayer structure of 100 nm ZnS-SiO2/35 nm GeSb2Te4/120 nm ZnS-SiO2/0.6 mm polycarbonate substrate. The amorphization is completed within 2.6 ns. The thickness of the phase change layer plays an important role in controlling the heat flow conditions in the system upon a fs pulse irradiation. The relative thermal process and effects are analyzed. The mechanism of crystalline to amorphous transition triggered by single femtosecond laser pulse is discussed.

KW - Femtosecond laser

KW - Optic disk

KW - Optical recording

KW - Phase change

KW - Pumping detection

KW - Thin film

UR - https://www.scopus.com/pages/publications/34250363139

M3 - 文章

AN - SCOPUS:34250363139

SN - 0258-7025

VL - 34

SP - 156

EP - 159

JO - Zhongguo Jiguang/Chinese Journal of Lasers

JF - Zhongguo Jiguang/Chinese Journal of Lasers

IS - SUPPL.

ER -

Amorphization induced in crystalline GeSb₂Te₄ films by single femtosecond pulses

Abstract

Keywords

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