Ambipolar thin-film field-effect transistor based on pentacene

Wei Wang; Jia Wei Shi; Chang Liang; Hong Mei Zhang; Ming Da Liu; Bao Fu Quan; Shu Xu Guo; Jun Feng Fang; Dong Ge Ma

doi:10.1088/0256-307X/22/2/064

Ambipolar thin-film field-effect transistor based on pentacene

Wei Wang^*
, Jia Wei Shi
, Chang Liang
, Hong Mei Zhang
, Ming Da Liu
, Bao Fu Quan
, Shu Xu Guo
, Jun Feng Fang
, Dong Ge Ma

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Organic thin film field-effect transistors based on pentacene have been fabricated by the method of fully-evaporation. The present device with a thin insulator layer can operate in low voltage, and shows ambipolar mode. In the case of the p-channel, the field-effect hole mobility was calculated to be 0.17cm²/Vs, whereas the field-effect electron mobility was about 0.02cm²/Vs for n-channel.

Original language	English
Pages (from-to)	496-498
Number of pages	3
Journal	Chinese Physics Letters
Volume	22
Issue number	2
DOIs	https://doi.org/10.1088/0256-307X/22/2/064
State	Published - Feb 2005
Externally published	Yes

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@article{ac880858899146878d97c3b0d03c716e,

title = "Ambipolar thin-film field-effect transistor based on pentacene",

abstract = "Organic thin film field-effect transistors based on pentacene have been fabricated by the method of fully-evaporation. The present device with a thin insulator layer can operate in low voltage, and shows ambipolar mode. In the case of the p-channel, the field-effect hole mobility was calculated to be 0.17cm2/Vs, whereas the field-effect electron mobility was about 0.02cm2/Vs for n-channel.",

author = "Wei Wang and Shi, \{Jia Wei\} and Chang Liang and Zhang, \{Hong Mei\} and Liu, \{Ming Da\} and Quan, \{Bao Fu\} and Guo, \{Shu Xu\} and Fang, \{Jun Feng\} and Ma, \{Dong Ge\}",

year = "2005",

month = feb,

doi = "10.1088/0256-307X/22/2/064",

language = "英语",

volume = "22",

pages = "496--498",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "2",

}

TY - JOUR

T1 - Ambipolar thin-film field-effect transistor based on pentacene

AU - Wang, Wei

AU - Shi, Jia Wei

AU - Liang, Chang

AU - Zhang, Hong Mei

AU - Liu, Ming Da

AU - Quan, Bao Fu

AU - Guo, Shu Xu

AU - Fang, Jun Feng

AU - Ma, Dong Ge

PY - 2005/2

Y1 - 2005/2

N2 - Organic thin film field-effect transistors based on pentacene have been fabricated by the method of fully-evaporation. The present device with a thin insulator layer can operate in low voltage, and shows ambipolar mode. In the case of the p-channel, the field-effect hole mobility was calculated to be 0.17cm2/Vs, whereas the field-effect electron mobility was about 0.02cm2/Vs for n-channel.

AB - Organic thin film field-effect transistors based on pentacene have been fabricated by the method of fully-evaporation. The present device with a thin insulator layer can operate in low voltage, and shows ambipolar mode. In the case of the p-channel, the field-effect hole mobility was calculated to be 0.17cm2/Vs, whereas the field-effect electron mobility was about 0.02cm2/Vs for n-channel.

UR - https://www.scopus.com/pages/publications/24144498755

U2 - 10.1088/0256-307X/22/2/064

DO - 10.1088/0256-307X/22/2/064

M3 - 文章

AN - SCOPUS:24144498755

SN - 0256-307X

VL - 22

SP - 496

EP - 498

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 2

ER -

Ambipolar thin-film field-effect transistor based on pentacene

Abstract

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