All spray pyrolysis deposited CdS sensitized ZnO films for quantum dot-sensitized solar cells

Guang Zhu; Tian Lv; Likun Pan; Zhuo Sun; Changqing Sun

doi:10.1016/j.jallcom.2010.09.026

All spray pyrolysis deposited CdS sensitized ZnO films for quantum dot-sensitized solar cells

Guang Zhu
, Tian Lv
, Likun Pan^*
, Zhuo Sun
, Changqing Sun

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University
Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

Sensitized-type solar cells based on ZnO photoanode and CdS quantum dots (QDs) as sensitizers have been fabricated. Both ZnO films and CdS QDs are prepared using ultrasonic spray pyrolysis (USP) deposition technique. This method allows a facile and rapid deposition and integration between CdS QDs and ZnO films without the need for post thermal treatment. The photovoltaic performances of the cells are investigated. The results show that the performance of the cell based on all USP deposited CdS sensitized ZnO photoanode achieves maximally a short circuit current density of 6.99 mA cm^-2 and a power conversion efficiency of 1.54%.

Original language	English
Pages (from-to)	362-365
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	509
Issue number	2
DOIs	https://doi.org/10.1016/j.jallcom.2010.09.026
State	Published - 12 Jan 2011

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CdS
Quantum dot sensitized solar cell
Ultrasonic spray pyrolysis
ZnO

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10.1016/j.jallcom.2010.09.026

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title = "All spray pyrolysis deposited CdS sensitized ZnO films for quantum dot-sensitized solar cells",

abstract = "Sensitized-type solar cells based on ZnO photoanode and CdS quantum dots (QDs) as sensitizers have been fabricated. Both ZnO films and CdS QDs are prepared using ultrasonic spray pyrolysis (USP) deposition technique. This method allows a facile and rapid deposition and integration between CdS QDs and ZnO films without the need for post thermal treatment. The photovoltaic performances of the cells are investigated. The results show that the performance of the cell based on all USP deposited CdS sensitized ZnO photoanode achieves maximally a short circuit current density of 6.99 mA cm-2 and a power conversion efficiency of 1.54\%.",

keywords = "CdS, Quantum dot sensitized solar cell, Ultrasonic spray pyrolysis, ZnO",

author = "Guang Zhu and Tian Lv and Likun Pan and Zhuo Sun and Changqing Sun",

year = "2011",

month = jan,

day = "12",

doi = "10.1016/j.jallcom.2010.09.026",

language = "英语",

volume = "509",

pages = "362--365",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - All spray pyrolysis deposited CdS sensitized ZnO films for quantum dot-sensitized solar cells

AU - Zhu, Guang

AU - Lv, Tian

AU - Pan, Likun

AU - Sun, Zhuo

AU - Sun, Changqing

PY - 2011/1/12

Y1 - 2011/1/12

N2 - Sensitized-type solar cells based on ZnO photoanode and CdS quantum dots (QDs) as sensitizers have been fabricated. Both ZnO films and CdS QDs are prepared using ultrasonic spray pyrolysis (USP) deposition technique. This method allows a facile and rapid deposition and integration between CdS QDs and ZnO films without the need for post thermal treatment. The photovoltaic performances of the cells are investigated. The results show that the performance of the cell based on all USP deposited CdS sensitized ZnO photoanode achieves maximally a short circuit current density of 6.99 mA cm-2 and a power conversion efficiency of 1.54%.

AB - Sensitized-type solar cells based on ZnO photoanode and CdS quantum dots (QDs) as sensitizers have been fabricated. Both ZnO films and CdS QDs are prepared using ultrasonic spray pyrolysis (USP) deposition technique. This method allows a facile and rapid deposition and integration between CdS QDs and ZnO films without the need for post thermal treatment. The photovoltaic performances of the cells are investigated. The results show that the performance of the cell based on all USP deposited CdS sensitized ZnO photoanode achieves maximally a short circuit current density of 6.99 mA cm-2 and a power conversion efficiency of 1.54%.

KW - CdS

KW - Quantum dot sensitized solar cell

KW - Ultrasonic spray pyrolysis

KW - ZnO

UR - https://www.scopus.com/pages/publications/78149280138

U2 - 10.1016/j.jallcom.2010.09.026

DO - 10.1016/j.jallcom.2010.09.026

M3 - 文章

AN - SCOPUS:78149280138

SN - 0925-8388

VL - 509

SP - 362

EP - 365

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 2

ER -

All spray pyrolysis deposited CdS sensitized ZnO films for quantum dot-sensitized solar cells

Abstract

UN SDGs

Keywords

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