Aging-Temperature-and-Propagation Induced Pulse-Broadening Aware Soft Error Rate Estimation for nano-Scale CMOS

  • Aibin Yan*
  • , Yafei Ling
  • , Kang Yang
  • , Zhili Chen
  • , Maoxiang Yi
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

This paper presents an aging-temperature-and-propagation induced pulse-broadening aware soft error rate (SER) estimation for nano-scale CMOS. To calculate the SER of circuits, logical masking effect, electrical effect and timing masking effect should be considered. In logical masking effect, a hybrid method using four-value probability and two-value probability is used; in electrical effect, pulse broadening induced by aging, temperature and PIPB is measured; in timing masking effect, failure rate of circuits is calculated. Finally, the SER of circuits is calculated using our proposed framework. Simulation results show that the average SER-increase of ISCAS'85 circuits is 61.2% under temperature from 0 to 120°C, 17.5% under aging from 0 to 10 years, and 137.8% under temperature-and-aging from 0°C-0 year to 120°C-10 years. The SER estimation efficiency and accuracy are ensured using Monte Carlo method.

Original languageEnglish
Title of host publicationProceedings - 2018 IEEE 27th Asian Test Symposium, ATS 2018
PublisherIEEE Computer Society
Pages86-91
Number of pages6
ISBN (Electronic)9781538694664
DOIs
StatePublished - 6 Dec 2018
Externally publishedYes
Event27th IEEE Asian Test Symposium, ATS 2018 - Hefei, China
Duration: 15 Oct 201818 Oct 2018

Publication series

NameProceedings of the Asian Test Symposium
Volume2018-October
ISSN (Print)1081-7735

Conference

Conference27th IEEE Asian Test Symposium, ATS 2018
Country/TerritoryChina
CityHefei
Period15/10/1818/10/18

Keywords

  • aging
  • propagation induced pulse broadening
  • soft error rate
  • temperature

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