Aging-induced abnormality of dielectric response under dc bias in Ba(Zr, Ti)O3 thin films

C. Gao; J. Yang; X. J. Meng; T. Lin; J. H. Ma; J. L. Sun; J. H. Chu

doi:10.1007/s00339-010-6076-3

Aging-induced abnormality of dielectric response under dc bias in Ba(Zr, Ti)O₃ thin films

C. Gao^*
, J. Yang
, X. J. Meng
, T. Lin
, J. H. Ma
, J. L. Sun
, J. H. Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The dielectric properties of fresh and aged Ba(Zr_0.25Ti _0.75)O₃ thin films have been investigated. It is found that the aged sample shows a significant decrease in the dielectric constant compared to the fresh one. Furthermore, the aged sample also exhibits abnormal double-peaks-shape butterfly C-V characteristics, which indicates the defect-dipole stabilized domain and/or domain-wall motions. Meanwhile, we found that double-peaks-shape butterfly C-V characteristics become weak and even disappear with increasing of applied electric field and temperature. The present results are discussed in light of the symmetry-conforming principle of point defects.

Original language	English
Pages (from-to)	123-128
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	104
Issue number	1
DOIs	https://doi.org/10.1007/s00339-010-6076-3
State	Published - Jul 2011

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title = "Aging-induced abnormality of dielectric response under dc bias in Ba(Zr, Ti)O3 thin films",

abstract = "The dielectric properties of fresh and aged Ba(Zr0.25Ti 0.75)O3 thin films have been investigated. It is found that the aged sample shows a significant decrease in the dielectric constant compared to the fresh one. Furthermore, the aged sample also exhibits abnormal double-peaks-shape butterfly C-V characteristics, which indicates the defect-dipole stabilized domain and/or domain-wall motions. Meanwhile, we found that double-peaks-shape butterfly C-V characteristics become weak and even disappear with increasing of applied electric field and temperature. The present results are discussed in light of the symmetry-conforming principle of point defects.",

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T1 - Aging-induced abnormality of dielectric response under dc bias in Ba(Zr, Ti)O3 thin films

AU - Gao, C.

AU - Yang, J.

AU - Meng, X. J.

AU - Lin, T.

AU - Ma, J. H.

AU - Sun, J. L.

AU - Chu, J. H.

PY - 2011/7

Y1 - 2011/7

N2 - The dielectric properties of fresh and aged Ba(Zr0.25Ti 0.75)O3 thin films have been investigated. It is found that the aged sample shows a significant decrease in the dielectric constant compared to the fresh one. Furthermore, the aged sample also exhibits abnormal double-peaks-shape butterfly C-V characteristics, which indicates the defect-dipole stabilized domain and/or domain-wall motions. Meanwhile, we found that double-peaks-shape butterfly C-V characteristics become weak and even disappear with increasing of applied electric field and temperature. The present results are discussed in light of the symmetry-conforming principle of point defects.

AB - The dielectric properties of fresh and aged Ba(Zr0.25Ti 0.75)O3 thin films have been investigated. It is found that the aged sample shows a significant decrease in the dielectric constant compared to the fresh one. Furthermore, the aged sample also exhibits abnormal double-peaks-shape butterfly C-V characteristics, which indicates the defect-dipole stabilized domain and/or domain-wall motions. Meanwhile, we found that double-peaks-shape butterfly C-V characteristics become weak and even disappear with increasing of applied electric field and temperature. The present results are discussed in light of the symmetry-conforming principle of point defects.

UR - https://www.scopus.com/pages/publications/79959216894

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DO - 10.1007/s00339-010-6076-3

M3 - 文章

AN - SCOPUS:79959216894

SN - 0947-8396

VL - 104

SP - 123

EP - 128

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 1

ER -

Aging-induced abnormality of dielectric response under dc bias in Ba(Zr, Ti)O₃ thin films

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