Advantages of sixsb2te phase-change material and its applications in phase-change random access memory

Yifeng Gu; Yan Cheng; Sannian Song; Ting Zhang; Zhitang Song; Xuyan Liu; Xiaofeng Du; Bo Liua; Songlin Fenga

doi:10.1016/j.scriptamat.2011.06.045

Advantages of si_xsb₂te phase-change material and its applications in phase-change random access memory

Yifeng Gu, Yan Cheng, Sannian Song, Ting Zhang, Zhitang Song, Xuyan Liu, Xiaofeng Du, Bo Liua, Songlin Fenga

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Si-doped Sb₂Te phase-change material was investigated for the application of phase-change memory. During the electrical test, Si0.53Sb ₂Te needs a lower phase-change operating voltage than Ge ₂Sb₂Te₅. For the storage of data for 10 years, Si0.53Sb₂Te needs an annealing temperature that is about 24 °C higher than for Ge₂Sb₂Te₅. Crystallization changes from being growth dominated to being nucleation dominated. X-ray diffraction patterns indicate that the polycrystalline Si_xSb ₂Te series has a d-phase with a rhombohedral crystalline structure, similar to the pure Sb₂Te. Crown

Original language	English
Pages (from-to)	622-625
Number of pages	4
Journal	Scripta Materialia
Volume	65
Issue number	7
DOIs	https://doi.org/10.1016/j.scriptamat.2011.06.045
State	Published - Oct 2011
Externally published	Yes

Keywords

Phase-change material
Phase-change memory

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10.1016/j.scriptamat.2011.06.045

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title = "Advantages of sixsb2te phase-change material and its applications in phase-change random access memory",

abstract = "Si-doped Sb2Te phase-change material was investigated for the application of phase-change memory. During the electrical test, Si0.53Sb 2Te needs a lower phase-change operating voltage than Ge 2Sb2Te5. For the storage of data for 10 years, Si0.53Sb2Te needs an annealing temperature that is about 24 °C higher than for Ge2Sb2Te5. Crystallization changes from being growth dominated to being nucleation dominated. X-ray diffraction patterns indicate that the polycrystalline SixSb 2Te series has a d-phase with a rhombohedral crystalline structure, similar to the pure Sb2Te. Crown",

keywords = "Phase-change material, Phase-change memory",

author = "Yifeng Gu and Yan Cheng and Sannian Song and Ting Zhang and Zhitang Song and Xuyan Liu and Xiaofeng Du and Bo Liua and Songlin Fenga",

year = "2011",

month = oct,

doi = "10.1016/j.scriptamat.2011.06.045",

language = "英语",

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pages = "622--625",

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T1 - Advantages of sixsb2te phase-change material and its applications in phase-change random access memory

AU - Gu, Yifeng

AU - Cheng, Yan

AU - Song, Sannian

AU - Zhang, Ting

AU - Song, Zhitang

AU - Liu, Xuyan

AU - Du, Xiaofeng

AU - Liua, Bo

AU - Fenga, Songlin

PY - 2011/10

Y1 - 2011/10

N2 - Si-doped Sb2Te phase-change material was investigated for the application of phase-change memory. During the electrical test, Si0.53Sb 2Te needs a lower phase-change operating voltage than Ge 2Sb2Te5. For the storage of data for 10 years, Si0.53Sb2Te needs an annealing temperature that is about 24 °C higher than for Ge2Sb2Te5. Crystallization changes from being growth dominated to being nucleation dominated. X-ray diffraction patterns indicate that the polycrystalline SixSb 2Te series has a d-phase with a rhombohedral crystalline structure, similar to the pure Sb2Te. Crown

AB - Si-doped Sb2Te phase-change material was investigated for the application of phase-change memory. During the electrical test, Si0.53Sb 2Te needs a lower phase-change operating voltage than Ge 2Sb2Te5. For the storage of data for 10 years, Si0.53Sb2Te needs an annealing temperature that is about 24 °C higher than for Ge2Sb2Te5. Crystallization changes from being growth dominated to being nucleation dominated. X-ray diffraction patterns indicate that the polycrystalline SixSb 2Te series has a d-phase with a rhombohedral crystalline structure, similar to the pure Sb2Te. Crown

KW - Phase-change material

KW - Phase-change memory

UR - https://www.scopus.com/pages/publications/84858995762

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DO - 10.1016/j.scriptamat.2011.06.045

M3 - 文章

AN - SCOPUS:84858995762

SN - 1359-6462

VL - 65

SP - 622

EP - 625

JO - Scripta Materialia

JF - Scripta Materialia

IS - 7

ER -

Advantages of si_xsb₂te phase-change material and its applications in phase-change random access memory

Abstract

Keywords

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