Accessing externally induced spatially-resolved strain in GaAs thin-film solar cells by electroluminescence imaging

Xiaobo Hu; Liangqing Zhu; Guoen Weng; Shaoqiang Chen

doi:10.1016/j.solmat.2017.12.019

Accessing externally induced spatially-resolved strain in GaAs thin-film solar cells by electroluminescence imaging

Xiaobo Hu
, Liangqing Zhu
, Guoen Weng
, Shaoqiang Chen^*

^*Corresponding author for this work

School of Communication and Electronic Engineering

East China Normal University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Externally induced strain effect was investigated in GaAs thin-film solar cells by electroluminescence (EL) imaging method. The strained regions demonstrated not only enhancement of local EL intensity but also redshift of the EL emission peaks. The observations were explained well by a gradient quantum-well (GQW) model correlated with tensile strain in the GaAs thin films. External biaxial strain was considered in this model which was accordingly obtained from the energy shift of the EL spectra. Finally, the spatially resolved strain in GaAs thin-film solar cells was obtained from the EL images by relating the EL emission intensity to the shift of the EL spectra. This work provides a potential standard method for diagnosis of externally induced strain in thin-film solar cells by EL measurements.

Original language	English
Pages (from-to)	283-288
Number of pages	6
Journal	Solar Energy Materials and Solar Cells
Volume	179
DOIs	https://doi.org/10.1016/j.solmat.2017.12.019
State	Published - 1 Jun 2018

Keywords

Electroluminescence imaging
GaAs thin-film solar cell
Strain effect

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solmat.2017.12.019

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@article{39098a9dbca24794a439834719c01b18,

title = "Accessing externally induced spatially-resolved strain in GaAs thin-film solar cells by electroluminescence imaging",

abstract = "Externally induced strain effect was investigated in GaAs thin-film solar cells by electroluminescence (EL) imaging method. The strained regions demonstrated not only enhancement of local EL intensity but also redshift of the EL emission peaks. The observations were explained well by a gradient quantum-well (GQW) model correlated with tensile strain in the GaAs thin films. External biaxial strain was considered in this model which was accordingly obtained from the energy shift of the EL spectra. Finally, the spatially resolved strain in GaAs thin-film solar cells was obtained from the EL images by relating the EL emission intensity to the shift of the EL spectra. This work provides a potential standard method for diagnosis of externally induced strain in thin-film solar cells by EL measurements.",

keywords = "Electroluminescence imaging, GaAs thin-film solar cell, Strain effect",

author = "Xiaobo Hu and Liangqing Zhu and Guoen Weng and Shaoqiang Chen",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2018",

month = jun,

day = "1",

doi = "10.1016/j.solmat.2017.12.019",

language = "英语",

volume = "179",

pages = "283--288",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Accessing externally induced spatially-resolved strain in GaAs thin-film solar cells by electroluminescence imaging

AU - Hu, Xiaobo

AU - Zhu, Liangqing

AU - Weng, Guoen

AU - Chen, Shaoqiang

PY - 2018/6/1

Y1 - 2018/6/1

N2 - Externally induced strain effect was investigated in GaAs thin-film solar cells by electroluminescence (EL) imaging method. The strained regions demonstrated not only enhancement of local EL intensity but also redshift of the EL emission peaks. The observations were explained well by a gradient quantum-well (GQW) model correlated with tensile strain in the GaAs thin films. External biaxial strain was considered in this model which was accordingly obtained from the energy shift of the EL spectra. Finally, the spatially resolved strain in GaAs thin-film solar cells was obtained from the EL images by relating the EL emission intensity to the shift of the EL spectra. This work provides a potential standard method for diagnosis of externally induced strain in thin-film solar cells by EL measurements.

AB - Externally induced strain effect was investigated in GaAs thin-film solar cells by electroluminescence (EL) imaging method. The strained regions demonstrated not only enhancement of local EL intensity but also redshift of the EL emission peaks. The observations were explained well by a gradient quantum-well (GQW) model correlated with tensile strain in the GaAs thin films. External biaxial strain was considered in this model which was accordingly obtained from the energy shift of the EL spectra. Finally, the spatially resolved strain in GaAs thin-film solar cells was obtained from the EL images by relating the EL emission intensity to the shift of the EL spectra. This work provides a potential standard method for diagnosis of externally induced strain in thin-film solar cells by EL measurements.

KW - Electroluminescence imaging

KW - GaAs thin-film solar cell

KW - Strain effect

UR - https://www.scopus.com/pages/publications/85038881974

U2 - 10.1016/j.solmat.2017.12.019

DO - 10.1016/j.solmat.2017.12.019

M3 - 文章

AN - SCOPUS:85038881974

SN - 0927-0248

VL - 179

SP - 283

EP - 288

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Accessing externally induced spatially-resolved strain in GaAs thin-film solar cells by electroluminescence imaging

Abstract

Keywords

UN SDGs

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