Access Characteristic Guided Partition for Nand Flash-Based High-Density SSDs

Yina Lv, Liang Shi*, Yunpeng Song, Chun Jason Xue

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

nand flash-based solid-state drives (SSDs) are a kind of widely adopted storage. However, state-of-the-art works presented that the SSD always suffers from significant read performance degradation. One of the most critical reasons is access interference between read and write operations. This is because the read and write latency gaps are more pronounced for the latest nand flash in SSDs. In this article, an interference reduction scheme is proposed to improve performance. This is motivated by the observation from several server workloads, where read and write operations can be easily separated based on access characteristics. Considering that SSDs are always organized with many parallel units (PUs), the basic idea of this work is to partition the PUs of the SSD into different areas and place data in the corresponding area according to access characteristics. Then, the interference can be optimized by issuing read and write requests to the different areas. To realize the above design, several approaches are proposed: first, an access characteristic-based data placement and migration method is proposed for read and write request separation. Second, to further adapt the parallel requirement for different workloads, a workload-based partitioning scheme is proposed to determine the number of PUs for read and write areas. Finally, based on partitioned SSD, a hot-data driven wear-leveling method is further proposed to balance the wearing of PUs in read and write areas. Experimental results show that partitioned SSD can significantly improve the read performance and wear leveling of partitioned SSD can guarantee performance and lifetime.

Original languageEnglish
Pages (from-to)4643-4656
Number of pages14
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume42
Issue number12
DOIs
StatePublished - 1 Dec 2023
Externally publishedYes

Keywords

  • Nand flash memory
  • parallelism
  • performance
  • read-write interference
  • storage system

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