Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix

Zhixun Ma; Xianbo Liao; Gonglin Kong; Junhao Chu

doi:10.1016/S0167-577X(99)00206-2

Absorption spectra of nanocrystalline silicon embedded in SiO₂ matrix

Zhixun Ma
, Xianbo Liao
, Gonglin Kong
, Junhao Chu

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Nanocrystalline silicon (nc-Si) embedded SiO₂ matrix has been formed by annealing the SiO_x films fabricated by plasma-enhanced chemical vapor deposition (PECVD) technique. Absorption coefficient and photoluminescence of the films have been measured at room temperature. The experimental results show that there is an 'aUrbach-like'b exponential absorption in the spectral range of 2.0-3.0 eV. The relationship of (αhv)^1/2 ∝ (hv - E_g) demonstrates that the luminescent nc-Si have an indirect band structure. The existence of Stokes shift between photoluminescence and absorption edge indicates that radiative combination can take place not only between electron states and hole states but also between shallow trap states of electrons and holes.

Original language	English
Pages (from-to)	367-370
Number of pages	4
Journal	Materials Letters
Volume	42
Issue number	6
DOIs	https://doi.org/10.1016/S0167-577X(99)00206-2
State	Published - Mar 2000
Externally published	Yes

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title = "Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix",

abstract = "Nanocrystalline silicon (nc-Si) embedded SiO2 matrix has been formed by annealing the SiOx films fabricated by plasma-enhanced chemical vapor deposition (PECVD) technique. Absorption coefficient and photoluminescence of the films have been measured at room temperature. The experimental results show that there is an 'aUrbach-like'b exponential absorption in the spectral range of 2.0-3.0 eV. The relationship of (αhv) 1/2 ∝ (hv - Eg) demonstrates that the luminescent nc-Si have an indirect band structure. The existence of Stokes shift between photoluminescence and absorption edge indicates that radiative combination can take place not only between electron states and hole states but also between shallow trap states of electrons and holes.",

author = "Zhixun Ma and Xianbo Liao and Gonglin Kong and Junhao Chu",

year = "2000",

month = mar,

doi = "10.1016/S0167-577X(99)00206-2",

language = "英语",

volume = "42",

pages = "367--370",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix

AU - Ma, Zhixun

AU - Liao, Xianbo

AU - Kong, Gonglin

AU - Chu, Junhao

PY - 2000/3

Y1 - 2000/3

N2 - Nanocrystalline silicon (nc-Si) embedded SiO2 matrix has been formed by annealing the SiOx films fabricated by plasma-enhanced chemical vapor deposition (PECVD) technique. Absorption coefficient and photoluminescence of the films have been measured at room temperature. The experimental results show that there is an 'aUrbach-like'b exponential absorption in the spectral range of 2.0-3.0 eV. The relationship of (αhv) 1/2 ∝ (hv - Eg) demonstrates that the luminescent nc-Si have an indirect band structure. The existence of Stokes shift between photoluminescence and absorption edge indicates that radiative combination can take place not only between electron states and hole states but also between shallow trap states of electrons and holes.

AB - Nanocrystalline silicon (nc-Si) embedded SiO2 matrix has been formed by annealing the SiOx films fabricated by plasma-enhanced chemical vapor deposition (PECVD) technique. Absorption coefficient and photoluminescence of the films have been measured at room temperature. The experimental results show that there is an 'aUrbach-like'b exponential absorption in the spectral range of 2.0-3.0 eV. The relationship of (αhv) 1/2 ∝ (hv - Eg) demonstrates that the luminescent nc-Si have an indirect band structure. The existence of Stokes shift between photoluminescence and absorption edge indicates that radiative combination can take place not only between electron states and hole states but also between shallow trap states of electrons and holes.

UR - https://www.scopus.com/pages/publications/0034159083

U2 - 10.1016/S0167-577X(99)00206-2

DO - 10.1016/S0167-577X(99)00206-2

M3 - 文章

AN - SCOPUS:0034159083

SN - 0167-577X

VL - 42

SP - 367

EP - 370

JO - Materials Letters

JF - Materials Letters

IS - 6

ER -

Absorption spectra of nanocrystalline silicon embedded in SiO₂ matrix

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