Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix

Zhixun Ma; Xianbo Liao; Gonglin Kong; Junhao Chu

doi:10.1063/1.124851

Absorption spectra of nanocrystalline silicon embedded in SiO₂ matrix

Zhixun Ma^*
, Xianbo Liao
, Gonglin Kong
, Junhao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

Nanocrystalline silicon embedded SiO₂ matrix is formed by annealing the SiO_x films fabricated by plasma enhanced chemical vapor deposition technique. Absorption coefficient and photoluminescence of the films have been measured at room temperature. The experimental results show that there exists an exponential absorption in the spectral range of 2.0-3.0 eV. The relationship of (αhν)^1/2∝(hν-E_g) demonstrates that the luminescent nanocrystalline silicon has an indirect band structure. The existence of Stokes shift between photoluminescence and absorption edge indicates that radiative combination can take place not only between shallow trap states of electrons and holes but also between quantized states of electrons and holes.

Original language	English
Pages (from-to)	1857-1859
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	13
DOIs	https://doi.org/10.1063/1.124851
State	Published - 27 Sep 1999
Externally published	Yes

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title = "Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix",

abstract = "Nanocrystalline silicon embedded SiO2 matrix is formed by annealing the SiOx films fabricated by plasma enhanced chemical vapor deposition technique. Absorption coefficient and photoluminescence of the films have been measured at room temperature. The experimental results show that there exists an exponential absorption in the spectral range of 2.0-3.0 eV. The relationship of (αhν)1/2∝(hν-Eg) demonstrates that the luminescent nanocrystalline silicon has an indirect band structure. The existence of Stokes shift between photoluminescence and absorption edge indicates that radiative combination can take place not only between shallow trap states of electrons and holes but also between quantized states of electrons and holes.",

author = "Zhixun Ma and Xianbo Liao and Gonglin Kong and Junhao Chu",

year = "1999",

month = sep,

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doi = "10.1063/1.124851",

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AU - Ma, Zhixun

AU - Liao, Xianbo

AU - Kong, Gonglin

AU - Chu, Junhao

PY - 1999/9/27

Y1 - 1999/9/27

N2 - Nanocrystalline silicon embedded SiO2 matrix is formed by annealing the SiOx films fabricated by plasma enhanced chemical vapor deposition technique. Absorption coefficient and photoluminescence of the films have been measured at room temperature. The experimental results show that there exists an exponential absorption in the spectral range of 2.0-3.0 eV. The relationship of (αhν)1/2∝(hν-Eg) demonstrates that the luminescent nanocrystalline silicon has an indirect band structure. The existence of Stokes shift between photoluminescence and absorption edge indicates that radiative combination can take place not only between shallow trap states of electrons and holes but also between quantized states of electrons and holes.

AB - Nanocrystalline silicon embedded SiO2 matrix is formed by annealing the SiOx films fabricated by plasma enhanced chemical vapor deposition technique. Absorption coefficient and photoluminescence of the films have been measured at room temperature. The experimental results show that there exists an exponential absorption in the spectral range of 2.0-3.0 eV. The relationship of (αhν)1/2∝(hν-Eg) demonstrates that the luminescent nanocrystalline silicon has an indirect band structure. The existence of Stokes shift between photoluminescence and absorption edge indicates that radiative combination can take place not only between shallow trap states of electrons and holes but also between quantized states of electrons and holes.

UR - https://www.scopus.com/pages/publications/0001126668

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DO - 10.1063/1.124851

M3 - 文章

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VL - 75

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

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Absorption spectra of nanocrystalline silicon embedded in SiO₂ matrix

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