Absolute Electroluminescence Imaging Diagnosis of GaAs Thin-Film Solar Cells

Xiaobo Hu; Tengfei Chen; Juanjuan Xue; Guoen Weng; Shaoqiang Chen; Hidefumi Akiyama; Ziqiang Zhu

doi:10.1109/JPHOT.2017.2731800

Absolute Electroluminescence Imaging Diagnosis of GaAs Thin-Film Solar Cells

Xiaobo Hu
, Tengfei Chen
, Juanjuan Xue
, Guoen Weng
, Shaoqiang Chen^*
, Hidefumi Akiyama
, Ziqiang Zhu

^*Corresponding author for this work

School of Communication and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

A spatially resolved absolute electroluminescence (EL) imaging method was utilized to analyze the photovoltaic properties and resistive loss properties of a GaAs thin-film solar cell. The I-V relation was extrapolated from the absolute EL efficiency measurements in conjunction with the external-quantum-efficiency (EQE) measurements; the EL extrapolated I-V relation has a merit over the conventional I-V relation measured with a solar simulator that it could eliminate the series resistance effect caused by external probe contact. Then, the mapping of the internal voltage of the solar cell and the sheet resistance of the window layer of the solar cell were obtained from the calibrated absolute EL imaging method. Finally, optic electroconversion losses of the solar cell including radiative loss, nonradiative loss, thermalization loss, transmission loss, and junction loss were quantified given by the EL and EQE measurements.

Original language	English
Article number	7993017
Journal	IEEE Photonics Journal
Volume	9
Issue number	5
DOIs	https://doi.org/10.1109/JPHOT.2017.2731800
State	Published - Oct 2017

Keywords

Luminiescence and fluorescence
imaging systems.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/JPHOT.2017.2731800

Cite this

@article{b21489df93534743bdfa1f67aef5ae83,

title = "Absolute Electroluminescence Imaging Diagnosis of GaAs Thin-Film Solar Cells",

abstract = "A spatially resolved absolute electroluminescence (EL) imaging method was utilized to analyze the photovoltaic properties and resistive loss properties of a GaAs thin-film solar cell. The I-V relation was extrapolated from the absolute EL efficiency measurements in conjunction with the external-quantum-efficiency (EQE) measurements; the EL extrapolated I-V relation has a merit over the conventional I-V relation measured with a solar simulator that it could eliminate the series resistance effect caused by external probe contact. Then, the mapping of the internal voltage of the solar cell and the sheet resistance of the window layer of the solar cell were obtained from the calibrated absolute EL imaging method. Finally, optic electroconversion losses of the solar cell including radiative loss, nonradiative loss, thermalization loss, transmission loss, and junction loss were quantified given by the EL and EQE measurements.",

keywords = "Luminiescence and fluorescence, imaging systems.",

author = "Xiaobo Hu and Tengfei Chen and Juanjuan Xue and Guoen Weng and Shaoqiang Chen and Hidefumi Akiyama and Ziqiang Zhu",

note = "Publisher Copyright: {\textcopyright} 2009-2012 IEEE.",

year = "2017",

month = oct,

doi = "10.1109/JPHOT.2017.2731800",

language = "英语",

volume = "9",

journal = "IEEE Photonics Journal",

issn = "1943-0655",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Absolute Electroluminescence Imaging Diagnosis of GaAs Thin-Film Solar Cells

AU - Hu, Xiaobo

AU - Chen, Tengfei

AU - Xue, Juanjuan

AU - Weng, Guoen

AU - Chen, Shaoqiang

AU - Akiyama, Hidefumi

AU - Zhu, Ziqiang

PY - 2017/10

Y1 - 2017/10

N2 - A spatially resolved absolute electroluminescence (EL) imaging method was utilized to analyze the photovoltaic properties and resistive loss properties of a GaAs thin-film solar cell. The I-V relation was extrapolated from the absolute EL efficiency measurements in conjunction with the external-quantum-efficiency (EQE) measurements; the EL extrapolated I-V relation has a merit over the conventional I-V relation measured with a solar simulator that it could eliminate the series resistance effect caused by external probe contact. Then, the mapping of the internal voltage of the solar cell and the sheet resistance of the window layer of the solar cell were obtained from the calibrated absolute EL imaging method. Finally, optic electroconversion losses of the solar cell including radiative loss, nonradiative loss, thermalization loss, transmission loss, and junction loss were quantified given by the EL and EQE measurements.

AB - A spatially resolved absolute electroluminescence (EL) imaging method was utilized to analyze the photovoltaic properties and resistive loss properties of a GaAs thin-film solar cell. The I-V relation was extrapolated from the absolute EL efficiency measurements in conjunction with the external-quantum-efficiency (EQE) measurements; the EL extrapolated I-V relation has a merit over the conventional I-V relation measured with a solar simulator that it could eliminate the series resistance effect caused by external probe contact. Then, the mapping of the internal voltage of the solar cell and the sheet resistance of the window layer of the solar cell were obtained from the calibrated absolute EL imaging method. Finally, optic electroconversion losses of the solar cell including radiative loss, nonradiative loss, thermalization loss, transmission loss, and junction loss were quantified given by the EL and EQE measurements.

KW - Luminiescence and fluorescence

KW - imaging systems.

UR - https://www.scopus.com/pages/publications/85028848563

U2 - 10.1109/JPHOT.2017.2731800

DO - 10.1109/JPHOT.2017.2731800

M3 - 文章

AN - SCOPUS:85028848563

SN - 1943-0655

VL - 9

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

IS - 5

M1 - 7993017

ER -

Absolute Electroluminescence Imaging Diagnosis of GaAs Thin-Film Solar Cells

Abstract

Keywords

UN SDGs

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