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Above-Bandgap Surface-Emitting Frequency Conversion in Semiconductor Nanoribbons With Ultralow Continuous-Wave Pump Power

  • University of Shanghai for Science and Technology

Research output: Contribution to journalArticlepeer-review

Abstract

Semiconductors have large optical nonlinear susceptibilities especially in the spectral range above material bandgaps. However, optical frequency conversion encounters large absorption above bandgaps and difficulty using common phase-matching techniques. The frequency conversion bandwidths are thus limited. Here, frequency up-conversion far above the bandgaps using surface emissions from semiconductor nanoribbons is demonstrated, wherein nanoscale waveguiding tightly confines fundamental waves for decreasing pump powers, and above-bandgap absorption is greatly decreased in nanoscale waveguide thickness. By using CdSe nanoribbons, efficient 532- and 404-nm second-harmonic and 459-nm sum-frequency generations are obtained with the continuous-wave pump power less than 100 μW. The normalized efficiency of 532-nm second-harmonic generation is about 2 × 10-5 mm-1 at pump power of 300 μW. Attractive features such as tunable spatial distribution and highly polarization are observed. A broadband emission with a full width half maximum of ∼10 nm is attained by frequency summing a continuous-wave laser and an amplified spontaneous emission source.

Original languageEnglish
Article number6891168
Pages (from-to)480-485
Number of pages6
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume21
Issue number1
DOIs
StatePublished - 1 Jan 2015

Keywords

  • Semiconductor nanoribbons
  • above bandgap
  • second harmonic generation
  • sum frequency generation
  • surface emitting

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