Ablation induced by femtosecond laser in sapphire

Xiaoxi Li; Tianqin Jia; Donghai Feng; Zhizhan Xu

doi:10.1016/j.apsusc.2003.10.044

Ablation induced by femtosecond laser in sapphire

Xiaoxi Li^*
, Tianqin Jia
, Donghai Feng
, Zhizhan Xu

^*Corresponding author for this work

CAS - Shanghai Institute of Optics and Fine Mechanics

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Based on the linearity of ablated area and laser pulse energy, the threshold fluence of sapphire is determined accurately in this paper. Meanwhile the dependences of F _th on pulse duration (τ < 1 ps) with laser at 400 and 800nm are presented, respectively. It is found that the experiment results agree well with the theoretical calculations based on avalanche model. And we discuss the photon absorption mechanism of the conduction band electrons in Al ₂ O ₃ single crystal.

Original language	English
Pages (from-to)	339-346
Number of pages	8
Journal	Applied Surface Science
Volume	225
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2003.10.044
State	Published - 30 Mar 2004
Externally published	Yes

Keywords

Ablation
Femtosecond laser
Sapphire

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10.1016/j.apsusc.2003.10.044

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title = "Ablation induced by femtosecond laser in sapphire",

abstract = " Based on the linearity of ablated area and laser pulse energy, the threshold fluence of sapphire is determined accurately in this paper. Meanwhile the dependences of F th on pulse duration (τ < 1 ps) with laser at 400 and 800nm are presented, respectively. It is found that the experiment results agree well with the theoretical calculations based on avalanche model. And we discuss the photon absorption mechanism of the conduction band electrons in Al 2 O 3 single crystal.",

keywords = "Ablation, Femtosecond laser, Sapphire",

author = "Xiaoxi Li and Tianqin Jia and Donghai Feng and Zhizhan Xu",

year = "2004",

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doi = "10.1016/j.apsusc.2003.10.044",

language = "英语",

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journal = "Applied Surface Science",

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AU - Li, Xiaoxi

AU - Jia, Tianqin

AU - Feng, Donghai

AU - Xu, Zhizhan

PY - 2004/3/30

Y1 - 2004/3/30

N2 - Based on the linearity of ablated area and laser pulse energy, the threshold fluence of sapphire is determined accurately in this paper. Meanwhile the dependences of F th on pulse duration (τ < 1 ps) with laser at 400 and 800nm are presented, respectively. It is found that the experiment results agree well with the theoretical calculations based on avalanche model. And we discuss the photon absorption mechanism of the conduction band electrons in Al 2 O 3 single crystal.

AB - Based on the linearity of ablated area and laser pulse energy, the threshold fluence of sapphire is determined accurately in this paper. Meanwhile the dependences of F th on pulse duration (τ < 1 ps) with laser at 400 and 800nm are presented, respectively. It is found that the experiment results agree well with the theoretical calculations based on avalanche model. And we discuss the photon absorption mechanism of the conduction band electrons in Al 2 O 3 single crystal.

KW - Ablation

KW - Femtosecond laser

KW - Sapphire

UR - https://www.scopus.com/pages/publications/1342265795

U2 - 10.1016/j.apsusc.2003.10.044

DO - 10.1016/j.apsusc.2003.10.044

M3 - 文章

AN - SCOPUS:1342265795

SN - 0169-4332

VL - 225

SP - 339

EP - 346

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Ablation induced by femtosecond laser in sapphire

Abstract

Keywords

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