A Zinc Oxide modified porous silicon humidity sensor

Tao Jiang; Xiaofeng Zhou; Jian Zhang; Yanling Shi; Tianxing Luo

doi:10.1109/ICIA.2006.305909

A Zinc Oxide modified porous silicon humidity sensor

Tao Jiang
, Xiaofeng Zhou
, Jian Zhang^*
, Yanling Shi
, Tianxing Luo

^*Corresponding author for this work

School of Communication and Electronic Engineering

East China Normal University

Research output: Contribution to conference › Paper › peer-review

5 Scopus citations

Abstract

In this paper, a relative humidity sensor based on zinc oxide modified porous silicon was discussed. The porous silicon was prepared by electrochemical etching process first. Then the sol-gel precursor of Zinc Oxide was applied to the PS substrates and annealed at 450°C. By this technique, it is possible to obtain a uniform zinc oxide Aim on the porous silicon substrates. The electrical conductivities of the porous silicon and zinc oxide/porous silicon structures under different humidity levels were measured. It is indicated that the modification of the porous silicon by sol-gel zinc oxide increase the sensitivity and shorten the response time to the relative humidity.

Original language	English
Pages	1158-1162
Number of pages	5
DOIs	https://doi.org/10.1109/ICIA.2006.305909
State	Published - 2006
Event	2006 IEEE International Conference on Information Acquisition, ICIA 2006 - Weihai, Shandong, China Duration: 20 Aug 2006 → 23 Aug 2006

Conference

Conference	2006 IEEE International Conference on Information Acquisition, ICIA 2006
Country/Territory	China
City	Weihai, Shandong
Period	20/08/06 → 23/08/06

Keywords

Humidity sensor
Modified Porous Silicon
Sol-gel
Zinc Oxide

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10.1109/ICIA.2006.305909

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title = "A Zinc Oxide modified porous silicon humidity sensor",

abstract = "In this paper, a relative humidity sensor based on zinc oxide modified porous silicon was discussed. The porous silicon was prepared by electrochemical etching process first. Then the sol-gel precursor of Zinc Oxide was applied to the PS substrates and annealed at 450°C. By this technique, it is possible to obtain a uniform zinc oxide Aim on the porous silicon substrates. The electrical conductivities of the porous silicon and zinc oxide/porous silicon structures under different humidity levels were measured. It is indicated that the modification of the porous silicon by sol-gel zinc oxide increase the sensitivity and shorten the response time to the relative humidity.",

keywords = "Humidity sensor, Modified Porous Silicon, Sol-gel, Zinc Oxide",

author = "Tao Jiang and Xiaofeng Zhou and Jian Zhang and Yanling Shi and Tianxing Luo",

year = "2006",

doi = "10.1109/ICIA.2006.305909",

language = "英语",

pages = "1158--1162",

note = "2006 IEEE International Conference on Information Acquisition, ICIA 2006 ; Conference date: 20-08-2006 Through 23-08-2006",

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TY - CONF

T1 - A Zinc Oxide modified porous silicon humidity sensor

AU - Jiang, Tao

AU - Zhou, Xiaofeng

AU - Zhang, Jian

AU - Shi, Yanling

AU - Luo, Tianxing

PY - 2006

Y1 - 2006

N2 - In this paper, a relative humidity sensor based on zinc oxide modified porous silicon was discussed. The porous silicon was prepared by electrochemical etching process first. Then the sol-gel precursor of Zinc Oxide was applied to the PS substrates and annealed at 450°C. By this technique, it is possible to obtain a uniform zinc oxide Aim on the porous silicon substrates. The electrical conductivities of the porous silicon and zinc oxide/porous silicon structures under different humidity levels were measured. It is indicated that the modification of the porous silicon by sol-gel zinc oxide increase the sensitivity and shorten the response time to the relative humidity.

AB - In this paper, a relative humidity sensor based on zinc oxide modified porous silicon was discussed. The porous silicon was prepared by electrochemical etching process first. Then the sol-gel precursor of Zinc Oxide was applied to the PS substrates and annealed at 450°C. By this technique, it is possible to obtain a uniform zinc oxide Aim on the porous silicon substrates. The electrical conductivities of the porous silicon and zinc oxide/porous silicon structures under different humidity levels were measured. It is indicated that the modification of the porous silicon by sol-gel zinc oxide increase the sensitivity and shorten the response time to the relative humidity.

KW - Humidity sensor

KW - Modified Porous Silicon

KW - Sol-gel

KW - Zinc Oxide

UR - https://www.scopus.com/pages/publications/46249099797

U2 - 10.1109/ICIA.2006.305909

DO - 10.1109/ICIA.2006.305909

M3 - 论文

AN - SCOPUS:46249099797

SP - 1158

EP - 1162

T2 - 2006 IEEE International Conference on Information Acquisition, ICIA 2006

Y2 - 20 August 2006 through 23 August 2006

ER -

A Zinc Oxide modified porous silicon humidity sensor

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