A Temperature-Dependent Nonlinear Model for GaN HEMTs

In this letter, an improved temperature-dependent model for gallium nitride high-electron-mobility transistors (GaN HEMTs) based on the EEsof scalable nonlinear HEMT (EEHEMT) model is developed. To precisely capture the temperature-dependent characteristics of GaN HEMTs, several parameters of the original EEHEMT model are modified, and appropriate functional relationships between these parameters and ambient temperature are established. To validate the accuracy of the proposed model, the dc and RF characteristics of a GaN HEMT with a gate width of 2 × 25 µm are measured at −40 ◦C, 0 ◦C, 40 ◦C, 80 ◦C, and 120 ◦C. Comparisons between the simulation data and measurement results demonstrate that the improved model can accurately reflect the trends in characteristics of the GaN HEMTs across the evaluated ambient temperature range.